Technische Information / technical information Net z-Thyristor-Modul TZ810N22KOF Phase Control Thyristor Module Key Parameters V / V 2200 V DRM RRM I 819 A (T =85C) TAVM C I 39000 A TSM 3570A (T =55C) C v 0,82 V T0 r 0,17 m T R 0,0405 K/W thJC Baseplate 70 mm Weight 1950 g For type designation please refer to actual shortform catalog Technische Information / technical information Net z-Thyristor-Modul TZ810N22KOF Phase Control Thyristor Module TZ810N22KOF TZ810N22KOF TIM Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / Maximum rated values 2200 V Periodische Vorwrts- und Rckwrts-Spitzensperrspannung T = -40C... T V ,V vj vj max DRM RRM repetitive peak forward off-state and reverse voltages 2200 V Vorwrts-Stospitzensperrspannung T = -40C... T V vj vj max DSM non-repetitive peak forward off-state voltage 2300 V Rckwrts-Stospitzensperrspannung T = +25C... T V vj vj max RSM non-repetitive peak reverse voltage Durchlastrom-Grenzeffektivwert I 1500 A TRMSM maximum RMS on-state current Dauergrenzstrom I 819 A T = 85C TAVM C average on-state current Stostrom-Grenzwert T = 25C, t = 10ms I 39.000 A vj P TSM surge current T = T , t = 10ms 35.000 A vj vj max P 7.605.000 Grenzlastintegral Tvj = 25C, tP = 10ms It As 6.125.000 It-value T = T , t = 10ms As vj vj max P Kritische Stromsteilheit DIN IEC 747-6 (di /dt) 200 A/s T cr critical rate of rise of on-state current f = 50Hz, i = 1A, di /dt = 1A/s GM G 1000 Kritische Spannungssteilheit Tvj = Tvj max, vD = 0,67 VDRM (dvD/dt)cr V/s th critical rate of rise of off-state voltage 6.Kennbuchstabe / 6 letter F Charakteristische Werte / Characteristic values max. 1,51 V Durchlaspannung T = T , i = 3000 A v vj vj max T T on-state voltage max. 0,82 V Schleusenspannung Tvj = Tvj max V(TO) threshold voltage max. 0,17 m Ersatzwiderstand T = T r vj vj max T slope resistance max. Zndstrom T = 25C, v = 12V I 250 mA vj D GT gate trigger current max. Zndspannung Tvj = 25C, vD = 12V VGT 2 V gate trigger voltage max. Nicht zndender Steuerstrom T = T , v = 12V I 10 mA vj vj max D GD max. gate non-trigger current Tvj = Tvj max , vD = 0,5 VDRM 5 mA Nicht zndende Steuerspannung T = T , v = 0,5 V V max. 0,2 V vj vj max D DRM GD gate non-trigger voltage Haltestrom Tvj = 25C, vD = 12V, RA = 1 IH max. 500 mA holding current Einraststrom T = 25C, v = 12V, R 10 I max. 2500 mA vj D GK L latching current iGM = 1A, diG/dt = 1A/s, tg = 20s Vorwrts- und Rckwrts-Sperrstrom T = T i , i max. 150 mA vj vj max D R forward off-state and reverse current v = V , v = V D DRM R RRM Zndverzug DIN IEC 747-6 t max. 4 s gd gate controlled delay time T = 25C, i = 1A, di /dt = 1A/s vj GM G prepared by: AG date of publication: 2017-02-02 approved by: MS revision: 3.2 Date of Publication 2017-02-02 Revision: 3.2 Seite/page 2/11