X-On Electronics has gained recognition as a prominent supplier of IS43DR81280C-3DBL DRAM across the USA, India, Europe, Australia, and various other global locations. IS43DR81280C-3DBL DRAM are a product manufactured by ISSI. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

IS43DR81280C-3DBL ISSI

IS43DR81280C-3DBL electronic component of ISSI
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Part No.IS43DR81280C-3DBL
Manufacturer: ISSI
Category: DRAM
Description: DRAM 1G, 1.8V, DDR2, 128Mx8, 333Mhz @CL5, 60 ball BGA, (8mmx 10.5mm), RoHS
Datasheet: IS43DR81280C-3DBL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 5.0769 ea
Line Total: USD 5.08 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 242
Multiples : 1
242 : USD 6.1223
250 : USD 6.0606
500 : USD 6.0001
1000 : USD 5.9409
2000 : USD 5.8817
2500 : USD 5.3915
3000 : USD 5.3374
4000 : USD 5.2844
5000 : USD 5.2315
10000 : USD 5.1786

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 484
Multiples : 484
484 : USD 3.3642

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 5.0769
10 : USD 4.2646
25 : USD 4.2282
100 : USD 3.8284
242 : USD 3.6637
484 : USD 3.5241
968 : USD 3.3845
2662 : USD 3.3496
5082 : USD 3.2333

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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We are delighted to provide the IS43DR81280C-3DBL from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IS43DR81280C-3DBL and other electronic components in the DRAM category and beyond.

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IS43/46DR81280C IS43/46DR16640C 128Mx8, 64Mx16 DDR2 DRAM DECEMBER 2017 FEATURES DESCRIPTION ISSI s 1Gb DDR2 SDRAM uses a double-data-rate Vdd = 1.8V 0.1V, Vddq = 1.8V 0.1V architecture to achieve high-speed operation. The JEDEC standard 1.8V I/O (SSTL 18-compatible) double-data rate architecture is essentially a 4n-prefetch Double data rate interface: two data transfers architecture, with an interface designed to transfer two per clock cycle data words per clock cycle at the I/O balls. Differential data strobe (DQS, DQS) 4-bit prefetch architecture On chip DLL to align DQ and DQS transitions ADDRESS TABLE with CK Parameter 128M x 8 64M x 16 8 internal banks for concurrent operation Configuration 16M x 8 x 8 8M x 16 x 8 Programmable CAS latency (CL) 3, 4, 5, 6 and 7 banks banks supported Refresh Count 8K/64ms 8K/64ms Posted CAS and programmable additive latency Row Addressing 16K (A0-A13) 8K (A0-A12) (AL) 0, 1, 2, 3, 4, 5 and 6 supported Column 1K (A0-A9) 1K (A0-A9) WRITE latency = READ latency - 1 tCK Addressing Programmable burst lengths: 4 or 8 Bank Addressing BA0 - BA2 BA0 - BA2 Adjustable data-output drive strength, full and Precharge A10 A10 reduced strength options Addressing On-die termination (ODT) KEY TIMING PARAMETERS OPTIONS Configuration(s): Speed Grade -25D -3D 128Mx8 (16Mx8x8 banks): IS43/46DR81280C tRCD 12.5 15 64Mx16 (8Mx16x8 banks): IS43/46DR16640C tRP 12.5 15 Package: tRC 55 55 x8: 60-ball BGA (8mm x 10.5mm) tRAS 40 40 x16: 84-ball WBGA (8mm x 12.5mm) tCK CL=3 5 5 Timing Cycle time 2.5ns CL=5 DDR2-800D tCK CL=4 3.75 3.75 2.5ns CL=6 DDR2-800E tCK CL=5 2.5 3 3.0ns CL=5 DDR2-667D tCK CL=6 2.5 3.75ns CL=4 DDR2-533C 5ns CL=3 DDR2-400B Temperature Range: Commercial (0C Tc 85C) Industrial (-40C Tc 95C -40C Ta 85C) Automotive, A1 (-40C Tc 95C -40C Ta 85C) Automotive, A2 (-40C Tc Ta 105C) Tc = Case Temp, Ta = Ambient Temp Copyright 2017 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason- ably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized b.) the user assume all such risks and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances Integrated Silicon Solution, Inc. www.issi.com 1 Rev. B 12/6/2017IS43/46DR81280C, IS43/46DR16640C GENERAL DESCRIPTION Read and write accesses to the DDR2 SDRAM are burst oriented accesses start at a selected location and continue for a burst length of four or eight in a programmed sequence. Accesses begin with the registration of an Active command, which is then followed by a Read or Write command. The address bits registered coincident with the active command are used to select the bank and row to be accessed (BA0-BA2 select the bank A0-A12(x16) or A0-A13(x8) select the row). The address bits registered coincident with the Read or Write command are used to select the starting column location A0-A9 for the burst access and to determine if the auto precharge A10 command is to be issued. Prior to normal operation, the DDR2 SDRAM must be initialized. The following sections provide detailed information covering device initialization, register definition, command descriptions and device operation. FUNCTIONAL BLOCK DIAGRAM DMa - DMb RDQS, RDQS Notes: 1. An:n = no. of address pins - 1 2. DQm: m = no. of data pins - 1 3. For x8 devices: DMa - DMb = DM DQSa - DQSb = DQS DQSa - DQSb = DQS RDQS, RDQS available only for x8 4. For x16 devices: DMa - DMb = UDM, LDM DQSa - DQSb = UDQS, LDQS DQSa - DQSb = UDQS, LDQS 2 Integrated Silicon Solution, Inc. www.issi.com Rev. B 12/6/2017

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8542.32.00 -- Memories
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Integrated Silicon Solution ()
Integrated Silicon Solution (ISSI)
INTEGRATED SILICON SOLUTIONS INC
ISSI
ISSI(Integrated Silicon Solution)
ISSI, Integrated Silicon Solution Inc
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