IS61C256AL 32K x 8 HIGH-SPEED CMOS STATIC RAM MAY 2012 DESCRIPTION FEATURES The ISSI IS61C256AL is a very high-speed, low power, High-speed access time: 10, 12 ns 32,768 word by 8-bit static RAMs. It is fabricated using CMOS Low Power Operation ISSI s high-performance CMOS technology. This highly 1 mW (typical) CMOS standby reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns maximum. 125 mW (typical) operating Fully static operation: no clock or refresh When CE is HIGH (deselected), the device assumes a required standby mode at which the power dissipation can be reduced down to 150 W (typical) with CMOS input levels. TTL compatible inputs and outputs Single 5V power supply Easy memory expansion is provided by using an active Lead-free available LOW Chip Enable (CE) input and an active LOW Output Enable (OE) input. The active LOW Write Enable (WE) controls both writing and reading of the memory. The IS61C256AL is pin compatible with other 32Kx8 SRAMs and are available in 28-pin SOJ and TSOP (Type I) packages. FUNCTIONAL BLOCK DIAGRAM 32K X 8 A0-A14 DECODER MEMORY ARRAY VDD GND I/O COLUMN I/O I/O0-I/O7 DATA CIRCUIT CE CONTROL OE CIRCUIT WE Copyright 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized b.) the user assume all such risks and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances Integrated Silicon Solution, Inc. www.issi.com 1-800-379-4774 1 Rev. C 05/09/12IS61C256AL PIN CONFIGURATION PIN CONFIGURATION 28-Pin SOJ 28-Pin TSOP A14 1 28 VDD OE 22 21 A10 A12 2 27 WE A11 23 20 CE A7 3 26 A13 A9 24 19 I/O7 A8 25 18 I/O6 A6 4 25 A8 A13 26 17 I/O5 A5 5 24 A9 WE 27 16 I/O4 A4 6 23 A11 VDD 28 15 I/O3 A14 1 14 GND A3 7 22 OE A12 2 13 I/O2 A2 8 21 A10 A7 3 12 I/O1 A1 9 20 CE A6 4 11 I/O0 A0 10 19 I/O7 A5 5 10 A0 A4 6 9 A1 I/O0 11 18 I/O6 A3 7 8 A2 I/O1 12 17 I/O5 I/O2 13 16 I/O4 GND 14 15 I/O3 PIN DESCRIPTIONS TRUTH TABLE WEWE CECE OEOE A0-A14 Address Inputs Mode WEWEWE CECECE OEOEOE I/O Operation VDD Current Not Selected X H X High-Z ISB1, ISB2 CE Chip Enable Input (Power-down) OE Output Enable Input Output Disabled H L H High-Z ICC WE Write Enable Input Read H L L DOUT ICC I/O0-I/O7 Bidirectional Ports Write L L X DIN ICC VDD Power GND Ground (1) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VTERM Terminal Voltage with Respect to GND 0.5 to +7.0 V TSTG Storage Temperature 65 to +150 C PT Power Dissipation 1.5 W IOUT DC Output Current (LOW) 20 mA Note: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2 Integrated Silicon Solution, Inc. www.issi.com 1-800-379-4774 Rev. C 05/09/12