X-On Electronics has gained recognition as a prominent supplier of IS61LF12836A-7.5TQLI SRAM across the USA, India, Europe, Australia, and various other global locations. IS61LF12836A-7.5TQLI SRAM are a product manufactured by ISSI. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

IS61LF12836A-7.5TQLI ISSI

IS61LF12836A-7.5TQLI electronic component of ISSI
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Part No.IS61LF12836A-7.5TQLI
Manufacturer: ISSI
Category: SRAM
Description: SRAM 4Mb 128Kx36 7.5ns Sync SRAM 3.3v
Datasheet: IS61LF12836A-7.5TQLI Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 9.988 ea
Line Total: USD 9.99 
Availability - 32
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
32
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 9.988
10 : USD 8.965
25 : USD 8.602
72 : USD 7.722
288 : USD 7.568
504 : USD 7.315
1008 : USD 7.117
2520 : USD 7.051
5040 : USD 7.007

   
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We are delighted to provide the IS61LF12836A-7.5TQLI from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IS61LF12836A-7.5TQLI and other electronic components in the SRAM category and beyond.

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IS61(64)LF12832A IS64VF12832A IS61(64)LF12836A IS61(64)VF12836A IS61(64)LF25618A IS61(64)VF25618A 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM FEBRUARY 2014 FEATURES DESCRIPTION The ISSI IS61(64)LF12832A, IS64VF12832A, IS61(64) Inter nal self-timed wr ite cycle LF/VF12836A and IS61(64)LF/VF25618A are high-speed, Individual Byte Wr ite Control and Global Wr ite low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication Clock controlled, registered address, data and and networking applications. The IS61(64)LF12832A is control organized as 131,072 words by 32 bits. The IS61(64)LF/ Burst sequence control using MODE input VF12836A is organized as 131,072 words by 36 bits. The IS61(64)LF/VF25618A is organized as 262,144 words by Three chip enable option for simple depth expan- 18 bits. Fabr icated with ISSI s advanced CMOS technol- sion and address pipelining ogy, the device integrates a 2-bit burst counter, high-speed SRAM core, and high-dr ive capability outputs into a single Common data inputs and data outputs monolithic circuit. All synchronous inputs pass through Auto Power-down dur ing deselect registers controlled by a positive-edge-triggered single clock input. Single cycle deselect Wr ite cycles are inter nally self-timed and are initiated by Snooze MODE for reduced-power standby the r ising edge of the clock input. Wr ite cycles can be one Power Supply to four bytes wide as controlled by the write control inputs. Separate byte enables allow individual bytes to be written. LF: Vdd 3.3V + 5%, Vddq 3.3V/2.5V + 5% Byte wr ite operation is perfor med by using byte wr ite en- VF: Vdd 2.5V -5% +10%, Vddq 2.5V -5% +10% able (BWE) input combined with one or more individual byte wr ite signals (BWx). In addition, Global Wr ite (GW) JEDEC 100-Pin QFP, 119-pin BGA, and 165-pin is available for writing all bytes at one time, regardless of BGA packages the byte write controls. Automotive temperature available Bursts can be initiated with either ADSP (Address Status Lead-free available Processor) or ADSC (Address Status Cache Controller) input pins. Subsequent burst addresses can be gener- ated internally and controlled by the ADV (burst address advance) input pin. The mode pin is used to select the burst sequence order, Linear burst is achieved when this pin is tied LOW. Inter leave burst is achieved when this pin is tied HIGH or left floating. FAST ACCESS TIME Symbol Parameter -6.5 -7.5 Units tkq Clock Access Time 6.5 7.5 ns tkc Cycle Time 7.5 8.5 ns Frequency 133 117 MHz Copyright 2014 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat- est version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason- ably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized b.) the user assume all such risks and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances Integrated Silicon Solution, Inc. 1 Rev. G1 2/11/2014IS61(64)LF12832A, IS61(64)LF12836A, IS61(64)LF25618A IS64VF12832A, IS61(64)VF12836A, IS61(64)VF25618A BLOCK DIAGRAM MODE A0 Q0 CLK CLK A0 BINARY COUNTER A1 Q1 ADV CE A1 128Kx32 ADSC 128Kx36 CLR ADSP 256Kx18 MEMORY ARRAY 17/18 15/16 17/18 A D Q ADDRESS REGISTER CE CLK 32, 36, 32, 36, or 18 or 18 GW D Q DQ(a-d) BWE BYTE WRITE BW(a-d) REGISTERS x18: a,b x32/x36: a-d CLK 32, 36, CE 2/4/8 or 18 INPUT CE2 D Q REGISTERS DQa - DQd CE2 ENABLE OE REGISTER CLK CE CLK POWER ZZ DOWN OE 2 Integrated Silicon Solution, Inc. Rev. G1 2/11/2014

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
Integrated Silicon Solution ()
Integrated Silicon Solution (ISSI)
INTEGRATED SILICON SOLUTIONS INC
ISSI
ISSI(Integrated Silicon Solution)
ISSI, Integrated Silicon Solution Inc
Lumissil
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