X-On Electronics has gained recognition as a prominent supplier of IS61LV12816L-10BLI SRAM across the USA, India, Europe, Australia, and various other global locations. IS61LV12816L-10BLI SRAM are a product manufactured by ISSI. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

IS61LV12816L-10BLI ISSI

IS61LV12816L-10BLI electronic component of ISSI
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Part No.IS61LV12816L-10BLI
Manufacturer: ISSI
Category: SRAM
Description: SRAM Chip Async Single 3.3V 2M-bit 128K x 16 10ns 48-Pin Mini-BGA
Datasheet: IS61LV12816L-10BLI Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.6018 ea
Line Total: USD 2.6 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 04 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 2.6018
25 : USD 2.5054
50 : USD 2.5054

0
Ship by Mon. 02 Dec to Wed. 04 Dec
MOQ : 480
Multiples : 480
480 : USD 3.9312
960 : USD 3.7451
2880 : USD 3.6986
5280 : USD 3.5125

0
Ship by Wed. 04 Dec to Tue. 10 Dec
MOQ : 3
Multiples : 1
3 : USD 3.0873

0
Ship by Wed. 04 Dec to Tue. 10 Dec
MOQ : 3
Multiples : 1
3 : USD 2.7671

   
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We are delighted to provide the IS61LV12816L-10BLI from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IS61LV12816L-10BLI and other electronic components in the SRAM category and beyond.

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IS61LV12816L ISSI 128K x 16 HIGH-SPEED CMOS STATIC RAM OCTOBER 2005 WITH 3.3V SUPPLY FEATURES DESCRIPTION The ISSI IS61LV12816L is a high-speed, 2,097,152-bit High-speed access time: 8, 10 ns static RAM organized as 131,072 words by 16 bits. It is Operating Current: 50mA (typ.) fabricated using ISSI s high-performance CMOS Stand by Current: 700A (typ.) technology. This highly reliable process coupled with innovative circuit design techniques, yields access times TTL and CMOS compatible interface levels as fast as 8 ns with low power consumption. Single 3.3V power supply When CE is HIGH (deselected), the device assumes a Fully static operation: no clock or refresh standby mode at which the power dissipation can be required reduced down with CMOS input levels. Three state outputs Easy memory expansion is provided by using Chip Enable Data control for upper and lower bytes and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the Industrial temperature available memory. A data byte allows Upper Byte (UB) and Lower Lead-free available Byte (LB) access. The IS61LV12816L is packaged in the JEDEC standard 44-pin TSOP (Type II), 44-pin LQFP, and 48-pin mini BGA (6mm x 8mm). FUNCTIONAL BLOCK DIAGRAM 128Kx16 A0-A16 DECODER MEMORY ARRAY VDD GND I/O0-I/O7 I/O Lower Byte COLUMN I/O DATA CIRCUIT I/O8-I/O15 Upper Byte CE OE CONTROL WE CIRCUIT UB LB Copyright 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. www.issi.com 1-800-379-4774 1 Rev. F 10/27/05 ISSI IS61LV12816L TRUTH TABLE I/O PIN Mode WEWEWE CECECE OEOEOE LBLBLB UBUBUB I/O0-I/O7 I/O8-I/O15 VDD Current WEWE CECE OEOE LBLB UBUB Not Selected X H X X X High-Z High-Z ISB1, ISB2 Output Disabled H L H X X High-Z High-Z ICC X L X H H High-Z High-Z Read H L L L H DOUT High-Z ICC H L L H L High-Z DOUT H LLLL DOUT DOUT Write L L X L H DIN High-Z ICC L L X H L High-Z DIN LL X L L DIN DIN PIN CONFIGURATION 44-Pin TSOP (Type II) (T) PIN DESCRIPTIONS A0-A16 Address Inputs I/O0-I/O15 Data Inputs/Outputs A4 1 44 A5 A3 2 43 A6 CE Chip Enable Input A2 3 42 A7 OE Output Enable Input A1 4 41 OE A0 5 40 UB WE Write Enable Input CE 6 39 LB LB Lower-byte Control (I/O0-I/O7) I/O0 7 38 I/O15 I/O1 8 37 I/O14 UB Upper-byte Control (I/O8-I/O15) I/O2 9 36 I/O13 I/O3 10 35 I/O12 NC No Connection VDD 11 34 GND VDD Power GND 12 33 VDD I/O4 13 32 I/O11 GND Ground I/O5 14 31 I/O10 I/O6 15 30 I/O9 I/O7 16 29 I/O8 WE 17 28 NC A16 18 27 A8 A15 19 26 A9 A14 20 25 A10 A13 21 24 A11 A12 22 23 NC 2 Integrated Silicon Solution, Inc. www.issi.com 1-800-379-4774 Rev. F 10/27/05

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
Integrated Silicon Solution ()
Integrated Silicon Solution (ISSI)
INTEGRATED SILICON SOLUTIONS INC
ISSI
ISSI(Integrated Silicon Solution)
ISSI, Integrated Silicon Solution Inc
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