X-On Electronics has gained recognition as a prominent supplier of IS61NLF102436B-6.5TQLI SRAM across the USA, India, Europe, Australia, and various other global locations. IS61NLF102436B-6.5TQLI SRAM are a product manufactured by ISSI. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

IS61NLF102436B-6.5TQLI ISSI

IS61NLF102436B-6.5TQLI electronic component of ISSI
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Part No.IS61NLF102436B-6.5TQLI
Manufacturer: ISSI
Category: SRAM
Description: SRAM 36Mb 6.5ns 3.3V or 2.5V 1Mx36 Sync SRAM
Datasheet: IS61NLF102436B-6.5TQLI Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 86.218 ea
Line Total: USD 86.22 
Availability - 65
Ship by Fri. 29 Nov to Tue. 03 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
65
Ship by Fri. 29 Nov to Tue. 03 Dec
MOQ : 1
Multiples : 1
1 : USD 86.218
10 : USD 78.474
25 : USD 78.012
50 : USD 73.414
72 : USD 73.403
288 : USD 71.148
504 : USD 71.148
1008 : USD 71.148
2520 : USD 71.148

   
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RoHS - XON
Icon ROHS
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Supply Voltage - Max
Supply Voltage - Min
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Supply Current - Max
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Moisture Sensitive
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We are delighted to provide the IS61NLF102436B-6.5TQLI from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IS61NLF102436B-6.5TQLI and other electronic components in the SRAM category and beyond.

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IS61(64)NLF102436B/IS61(64)NVF/NVVF102436B IS61(64)NLF204818B/IS61(64)NVF/NVVF204818B MAY 2015 1M x 36, 2M x 18 36Mb, FLOW THROUGH NO WAIT STATE BUS SRAM FEATURES DESCRIPTION The 36 Meg product family features high-speed, low-power 100 percent bus utilization synchronous static RAMs designed to provide a burstable, No wait cycles between Read and Write high-performance, no wait state, device for networking and communications applications. They are organized as Internal self-timed write cycle 1,048,476 words by 36 bits and 2,096,952 words by 18 Individual Byte Write Control bits, fabricated with ISSI s advanced CMOS technology. Single Read/Write control pin Incorporating a no wait state feature, wait cycles are Clock controlled, registered address, eliminated when the bus switches from read to write, or data and control write to read. This device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs Interleaved or linear burst sequence control us- into a single monolithic circuit. ing MODE input All synchronous inputs pass through registers are controlled Three chip enables for simple depth expansion by a positive-edge-triggered single clock input. Operations and address pipelining may be suspended and all synchronous inputs ignored when Clock Enable, CKE is HIGH. In this state the internal Power Down mode device will hold their previous values. Common data inputs and data outputs All Read, Write and Deselect cycles are initiated by the ADV CKE pin to enable clock and suspend operation input. When the ADV is HIGH the internal burst counter JEDEC 100-pin TQFP, 119-ball PBGA, and 165- is incremented. New external addresses can be loaded when ADV is LOW. ball PBGA packages Write cycles are internally self-timed and are initiated Power supply: by the rising edge of the clock inputs and when WE is NLF: Vdd 3.3V ( 5%), Vddq 3.3V/2.5V ( 5%) LOW. Separate byte enables allow individual bytes to be NVF: Vdd 2.5V ( 5%), Vddq 2.5V ( 5%) written. NVVF: Vdd 1.8V ( 5%), Vddq 1.8V ( 5%) A burst mode pin (MODE) defines the order of the burst JTAG Boundary Scan for PBGA packages sequence. When tied HIGH, the interleaved burst sequence is selected. When tied LOW, the linear burst sequence is Industrial temperature available selected. Lead-free available FAST ACCESS TIME Symbol Parameter 6.5 7.5 Units tkq Clock Access Time 6.5 7.5 ns tkc Cycle Time 7.5 8.5 ns Frequency 133 117 MHz Copyright 2013 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized b.) the user assume all such risks and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances Integrated Silicon Solution, Inc. www.issi.com 1-800-379-4774 1 Rev. A 04/17/2015IS61(64)NLF102436B/IS61(64)NVF/NVVF102436B IS61(64)NLF204818B/IS61(64)NVF/NVVF204818B BLOCK DIAGRAM A0-20 ( A0-21) A0-20 ( A0-21) A2-20(A2-A21) A0-20(A0-21) Address MODE 1Mx36 Registers 2Mx18 Burst Logic ADV Memory Array A0-A1 A 0-A 1 K K Address Address CLK Registers Registers /CKE Data-In Register K /CE CE2 /CE2 Data-In Register Control Logic ADV K /WE /BWx (X=a,b,c,d or a,b) /OE Output ZZ Buffers K 36(18) DQx/DQPx 2 Integrated Silicon Solution, Inc. www.issi.com Rev. A 04/17/2015 Control register

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
Integrated Silicon Solution ()
Integrated Silicon Solution (ISSI)
INTEGRATED SILICON SOLUTIONS INC
ISSI
ISSI(Integrated Silicon Solution)
ISSI, Integrated Silicon Solution Inc
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