IS61WV102416ALL IS61WV102416BLL IS64WV102416BLL 1Mx16HIGH-SPEEDASYNCHRONOUS MAY2012 CMOSST ATICRAM WITH3.3VSUPPLY FEATURES DESCRIPTION The ISSI IS61WV102416ALL/BLL and IS64WV102416BLL High-speed access times: are high-speed, 16M-bit static RAMs organized as 1024K 8, 10, 20 ns words by 16 bits. It is fabricated using ISSI s high-perfor- High-performance, low-power CMOS process mance CMOS technology. This highly reliable process Multiple center power and ground pins for greater coupled with innovative circuit design techniques, yields noise immunity high-performance and low power consumption devices. Easy memory expansion with CE and OE op- tions When CE is HIGH (deselected), the device assumes a CE power-down standby mode at which the power dissipation can be re- duced down with CMOS input levels. Fully static operation: no clock or refresh required Easy memory expansion is provided by using Chip Enable TTL compatible inputs and outputs and Output Enable inputs, CE and OE. The active LOW Single power supply Write Enable (WE) controls both writing and reading of the Vdd 1.65V to 2.2V (IS61WV102416ALL) memory. A data byte allows Upper Byte (UB) and Lower speed = 20ns forVdd 1.65V to 2.2V Byte (LB) access. Vdd 2.4V to 3.6V (IS61/64WV102416BLL) The device is packaged in the JEDEC standard 48-pin speed = 10ns forVdd 2.4V to 3.6V TSOP Type I and 48-pin Mini BGA (9mm x 11mm). speed = 8ns forVdd 3.3V + 5% Packages available: 48-ball miniBGA (9mm x 11mm) 48-pinTSOP (Type I) Industrial and AutomotivTeemper ature Support Lead-free available Data control for upper and lower bytes FUNCTIONAL BLOCK DIAGRAM 1024K x 16 A0-A19 DECODER MEMORY ARRAY VDD GND I/O0-I/O7 I/O Lower Byte COLUMN I/O DATA CIRCUIT I/O8-I/O15 Upper Byte CE OE CONTROL WE CIRCUIT UB LB Copyright 2006 Integrated Silicon Solution, Inc.All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services descr ibedCustomers herein. are advised to obtain the lat- est version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. www.issi.com 1-800-379-4774 1 Rev. F 05/09/12IS61WV102416ALL IS61WV102416BLL IS64WV102416BLL 48-pinminiBGA(9mmx11mm) 1 2 3 4 5 6 A LB OE A0 A1 A2 NC I/O UB A3 A4 CE I/O B 8 0 I/O I/O A5 A6 I/O I/O C 9 10 1 2 GND A7 I/O11 A17 I/O3 VDD D VDD I/O NC A16 I/O GND 12 4 E I/O A14 I/O 14 I/O A15 5 I/O F 13 6 I/O A19 A12 A13 WE I/O G 15 7 A18 A8 A9 A10 A11 NC H PINDESCRIPTIONS A0-A19 Address Inputs I/O0-I/O15 Data Inputs/Outputs CE Chip Enable Input OE Output Enable Input WE Write Enable Input LB Lower-byte Control (I/O0-I/O7) UB Upper-byte Control (I/O8-I/O15) NC No Connection Vdd Power GND Ground 2 Integrated Silicon Solution, Inc. www.issi.com 1-800-379-4774 Rev. F 05/09/12