X-On Electronics has gained recognition as a prominent supplier of IS61WV10248EDBLL-10TLI SRAM across the USA, India, Europe, Australia, and various other global locations. IS61WV10248EDBLL-10TLI SRAM are a product manufactured by ISSI. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

IS61WV10248EDBLL-10TLI ISSI

IS61WV10248EDBLL-10TLI electronic component of ISSI
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See Product Specifications
Part No.IS61WV10248EDBLL-10TLI
Manufacturer: ISSI
Category: SRAM
Description: Memory; SRAM; 1Mx8bit; 2.4÷3.6V; 10ns; TSOP44 II; -40÷85°C
Datasheet: IS61WV10248EDBLL-10TLI Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 14.861 ea
Line Total: USD 14.86 
Availability - 64
Ship by Mon. 30 Dec to Wed. 01 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
64
Ship by Mon. 30 Dec to Wed. 01 Jan
MOQ : 1
Multiples : 1
1 : USD 14.861
10 : USD 13.882
25 : USD 13.431
100 : USD 11.539
270 : USD 11.176
540 : USD 10.956

   
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Product Category
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Kind Of Memory
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Type Of Integrated Circuit
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We are delighted to provide the IS61WV10248EDBLL-10TLI from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IS61WV10248EDBLL-10TLI and other electronic components in the SRAM category and beyond.

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IS61WV10248EDBLL IS64WV10248EDBLL 1M x 8 HIGH-SPEED ASYNCHRONOUS APRIL 2020 CMOS STATIC RAM WITH ECC FEATURES DESCRIPTION High-speed access times: 8, 10, 20 ns The ISSI IS61/64WV10248EDBLL are very high-speed, High-performance, low-power CMOS process low power, 1M-word by 8-bit CMOS static RAM. The Multiple center power and ground pins for IS61/64WV10248EDBLL are fabricated using ISSI s high-performance CMOS technology. This highly reli- greater noise immunity able process coupled with innovative circuit design Easy memory expansion with CE and OE options techniques, yields higher performance and low power CE power-down consumption devices. Fully static operation: no clock or refresh When CE is HIGH (deselected), the device assumes required a standby mode at which the power dissipation can be TTL compatible inputs and outputs reduced down with CMOS input levels. Packages available: The IS61/64WV10248EDBLL operate from a single 48-ball miniBGA (6mm x 8mm) power supply and all inputs are TTL-compatible. 44-pin TSOP (Type II) The IS61/64WV10248EDBLL are available in 48 ball Industrial and Automotive Temperature Support mini BGA (6mm x 8mm) and 44-pin TSOP (Type II) Lead-free available packages. FUNCTIONAL BLOCK DIAGRAM Memory Array ECC Array A0-A19 Decoder (1024Kx8) (1024Kx4) 8 4 8 8 12 I/O Data ECC Column I/O IO0-7 Circuit /CE Control /OE Circuit /WE Copyright 2020 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat- est version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason- ably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized b.) the user assume all such risks and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances Integrated Silicon Solution, Inc. www.issi.com 1 Rev. B 04/27/2020A2 CE I/O1 I/O3 I/O4 I/O5 WE A11 IS61WV10248EDBLL IS64WV10248EDBLL PIN CONFIGURATION 48-pin Mini BGA (B) (6mm x 8mm) 44-pin TSOP (Type II ) 1 2 3 4 5 6 NC 1 44 NC 43 NC NC 2 A0 3 42 NC A1 4 41 A18 A2 5 40 A17 A3 6 39 A16 A NC OE A0 A1 NC A4 7 38 A15 B NC NC A3 A4 I/O0 CE 8 37 OE I/O0 9 36 I/O7 C NC NC A5 A6 I/O2 I/O1 10 35 I/O6 VDD 11 34 GND GND NC A17 A7 VDD D GND 12 33 VDD VDD NC NC A16 GND E I/O2 13 32 I/O5 I/O3 14 31 I/O4 NC NC A14 A15 I/O6 F 30 WE 15 A14 NC NC A12 A13 I/O7 G A5 16 29 A13 A6 17 28 A12 A18 A8 A10 A19 A9 H A7 18 27 A11 A8 19 26 A10 A9 20 25 A19 NC 21 24 NC NC 22 23 NC PIN DESCRIPTIONS A0-A19 Address Inputs CE Chip Enable Input OE Output Enable Input WE Write Enable Input I/O0-I/O7 Data Input / Output Vdd Power GND Ground NC No Connection 2 Integrated Silicon Solution, Inc. www.issi.com Rev. B 04/27/2020

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
Integrated Silicon Solution ()
Integrated Silicon Solution (ISSI)
INTEGRATED SILICON SOLUTIONS INC
ISSI
ISSI(Integrated Silicon Solution)
ISSI, Integrated Silicon Solution Inc
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