X-On Electronics has gained recognition as a prominent supplier of IS61WV25632BLL-10BI SRAM across the USA, India, Europe, Australia, and various other global locations. IS61WV25632BLL-10BI SRAM are a product manufactured by ISSI. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

IS61WV25632BLL-10BI ISSI

IS61WV25632BLL-10BI electronic component of ISSI
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See Product Specifications
Part No.IS61WV25632BLL-10BI
Manufacturer: ISSI
Category: SRAM
Description: SRAM Chip Async Quad 3.3V 8M-Bit 256K x 32 10ns 90-Pin TF-BGA
Datasheet: IS61WV25632BLL-10BI Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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We are delighted to provide the IS61WV25632BLL-10BI from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IS61WV25632BLL-10BI and other electronic components in the SRAM category and beyond.

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IS61WV25632ALL/ALS IS61WV25632BLL/BLS IS64WV25632BLL/BLS 256K x 32 HIGH-SPEED ASYNCHRONOUS PRELIMINARY INFORMATION CMOS STATIC RAM WITH 3.3V SUPPLY APRIL 2008 FEATURES DESCRIPTION The ISSI IS61WV25632Axx/Bxx and IS64WV25632Bxx High-speed access times: are high-speed, 8M-bit static RAMs organized as 256K 8, 10, 20 ns words by 32 bits. It is fabricated using ISSI s high-per- High-performance, low-power CMOS process formance CMOS technology. This highly reliable process Multiple center power and ground pins for coupled with innovative circuit design techniques, yields greater noise immunity high-performance and low power consumption devices. Easy memory expansion with CE and OE op- tions When CE is HIGH (deselected), the device assumes CE power-down a standby mode at which the power dissipation can be reduced down with CMOS input levels. Fully static operation: no clock or refresh required Easy memory expansion is provided by using Chip Enable TTL compatible inputs and outputs and Output Enable inputs, CE and OE. The active LOW Single power supply Write Enable (WE) controls both writing and reading of Vdd 1.65V to 2.2V (IS61WV25632Axx) the memory. speed = 20ns for Vdd 1.65V to 2.2V Vdd 2.4V to 3.6V (IS61/64WV25632Bxx) The device is packaged in the JEDEC standard 90-ball BGA (8mm x 13mm). speed = 10ns for Vdd 2.4V to 3.6V speed = 8ns for Vdd 3.3V + 5% Packages available: 90-ball miniBGA (8mm x 13mm) Industrial and Automotive Temperature Support Lead-free available FUNCTIONAL BLOCK DIAGRAM 256K x 32 A0-A17 DECODER MEMORY ARRAY VDD VSS DQa-d I/O COLUMN I/O DATA CIRCUIT CE OE CONTROL WE CIRCUIT BWa-d CE2 Copyright 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. www.issi.com 1 Rev. 00B 04/23/08IS61WV25632ALL/ALS IS61WV25632BLL/BLS IS64WV25632BLL/BLS PIN CONFIGURATION PACKAGE CODE: B 90 BALL FBGA (Top View) (8.00 mm x 13.00 mm Body, 0.8 mm Ball Pitch) 1 2 3 4 5 6 7 8 9 A DQ1 DQ0 VSS VDD DQ31 DQ30 B DQ2 VDD VSS VDD VSS DQ29 C VSS DQ3 DQ4 DQ27 DQ28 VDD D VSS DQ6 DQ5 DQ26 DQ25 VDD E VDD DQ7 NC NC DQ24 VSS F VSS BWa A3 A4 BWd VDD G A0 A1 A2 A10 A5 A6 H A15 A14 A13 A8 A7 A11 J CE2 A17 A16 A9 A12 CE K BWb NC NC WE OE BWc L VDD DQ8 VSS DQ23 VDD VSS M VSS DQ9 DQ10 DQ22 DQ21 VDD N VSS DQ12 DQ11 DQ19 DQ20 VDD P DQ13 VDD VSS VSS VDD DQ18 R DQ14 DQ15 VSS DQ16 VDD DQ17 PIN DESCRIPTIONS A0-A17 Address Inputs DQx Data I/O CE, CE2 Chip Enable Input OE Output Enable Input WE Write Enable Input BWx (x=a-d) Byte Write Control Vdd Power Vss Ground NC No Connection 2 Integrated Silicon Solution, Inc. www.issi.com Rev. 00B 04/23/08

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
Integrated Silicon Solution ()
Integrated Silicon Solution (ISSI)
INTEGRATED SILICON SOLUTIONS INC
ISSI
ISSI(Integrated Silicon Solution)
ISSI, Integrated Silicon Solution Inc
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