X-On Electronics has gained recognition as a prominent supplier of IS61WV5128BLL-10BI SRAM across the USA, India, Europe, Australia, and various other global locations. IS61WV5128BLL-10BI SRAM are a product manufactured by ISSI. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

IS61WV5128BLL-10BI ISSI

IS61WV5128BLL-10BI electronic component of ISSI
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See Product Specifications
Part No.IS61WV5128BLL-10BI
Manufacturer: ISSI
Category: SRAM
Description: SRAM Chip Async Single 2.5V/3.3V 4M-bit 512K x 8 10ns 36-Pin Mini-BGA
Datasheet: IS61WV5128BLL-10BI Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
480: USD 4.96 ea
Line Total: USD 2380.8 
Availability - 0
MOQ: 480  Multiples: 480
Pack Size: 480
Availability Price Quantity
0
Ship by Wed. 04 Dec to Tue. 10 Dec
MOQ : 480
Multiples : 480
480 : USD 4.96

   
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RoHS - XON
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Supply Voltage - Max
Supply Voltage - Min
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We are delighted to provide the IS61WV5128BLL-10BI from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IS61WV5128BLL-10BI and other electronic components in the SRAM category and beyond.

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IS61WV5128ALL/ALS IS61WV5128BLL/BLS IS64WV5128BLL/BLS 512K x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM AUGUST 2009 FEATURES DESCRIPTION HIGH SPEED: (IS61/64WV5128ALL/BLL) The ISSI IS61WV5128Axx and IS61/64WV5128Bxx are very high-speed, low power, 524,288-word by High-speed access time: 8, 10, 20 ns 8-bit CMOS static RAMs. The IS61WV5128Axx and Low Active Power : 85 mW (typical) IS61/64WV5128Bxx are fabricated using ISSI s high- Low stand-by power : 7 mW (typical) performance CMOS technology. This highly reliable pro- CMOS standby cess coupled with innovative circuit design techniques, yields higher performance and low power consumption LOW POWER: (IS61/64WV5128ALS/BLS) devices. High-speed access time: 25, 35 ns When CE is HIGH (deselected), the device assumes Low Active Power : 35 mW (typical) a standby mode at which the power dissipation can be Low stand-by power : 0.6 mW (typical) reduced down with CMOS input levels. CMOS standby The IS61WV5128Axx and IS61/64WV5128Bxx operate Single power supply from a single power supply. Vdd 1.65V to 2.2V (IS61WV5128Axx) The IS61WV5128ALL and IS61/64WV5128BLL are avail- Vdd 2.4V to 3.6V (IS61/64WV5128Bxx) able in 36-pin 400-mil SOJ, 36-pin mini BGA, and 44-pin TSOP (Type II) packages. Fully static operation: no clock or refresh required The IS61WV5128ALS and IS61/64WV5128BLS are available in 32-pinTSOP (Type I), 32-pin sTSOP (Type I), Three state outputs 32-pin SOP and 32-pin TSOP (Type II) packages. Industr ial and Automotive temperature suppor t Lead-free available FUNCTIONAL BLOCK DIAGRAM 512K X 8 A0-A18 DECODER MEMORY ARRAY VDD GND I/O COLUMN I/O I/O0-I/O7 DATA CIRCUIT CE CONTROL OE CIRCUIT WE Copyright 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat- est version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. www.issi.com 1 Rev. I 08/10/09IS61WV5128ALL/ALS, IS61WV5128BLL/BLS IS64WV5128BLL/BLS PIN CONFIGURATION (HIGH SPEED) (61/64WV5128ALL/BLL) 36 mini BGA 44-Pin TSOP (Type II) 1 2 3 4 5 6 NC 1 44 NC NC 2 43 NC A0 3 42 NC A1 4 41 A18 A2 5 40 A17 A3 6 39 A16 A A0 A1 NC A3 A6 A8 A4 7 38 A15 B I/O4 A2 WE A4 A7 I/O0 CE 8 37 OE I/O0 9 36 I/O7 C I/O5 NC A5 I/O1 I/O1 10 35 I/O6 GND VDD 34 GND D VDD 11 GND 12 33 VDD VDD GND E 32 I/O2 13 I/O5 F I/O6 A18 A17 I/O2 I/O3 14 31 I/O4 WE 15 30 A14 I/O7 OE CE A16 A15 I/O3 G A5 16 29 A13 A9 A10 A12 A13 A14 A11 A6 17 28 A12 H A7 18 27 A11 A8 19 26 A10 A9 20 25 NC NC 21 24 NC NC 22 23 NC 36-Pin SOJ PIN DESCRIPTIONS A0 1 36 NC A0-A18 Address Inputs A1 2 35 A18 CE Chip Enable Input A2 3 34 A17 OE Output Enable Input A3 4 33 A16 WE Write Enable Input A4 5 32 A15 I/O0-I/O7 Bidirectional Ports CE 6 31 OE I/O0 7 30 I/O7 Vdd Power I/O1 8 29 I/O6 GND Ground VDD 9 28 GND NC No Connection GND 10 27 VDD I/O2 11 26 I/O5 25 I/O3 12 I/O4 WE 13 24 A14 14 23 A5 A13 A6 15 22 A12 A7 16 21 A11 A8 17 20 A10 A9 18 19 NC 2 Integrated Silicon Solution, Inc. www.issi.com Rev. I 08/10/09

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
Integrated Silicon Solution ()
Integrated Silicon Solution (ISSI)
INTEGRATED SILICON SOLUTIONS INC
ISSI
ISSI(Integrated Silicon Solution)
ISSI, Integrated Silicon Solution Inc
Lumissil
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