IS64WV6416BLL ISSI IS61WV6416BLL 64K x 16 HIGH-SPEED CMOS STATIC RAM OCTOBER 2006 FEATURES DESCRIPTION The ISSI IS61/64WV6416BLL is a high-speed, 1,048,576- High-speed access time: bit static RAM organized as 65,536 words by 16 bits. It is 12 ns: 3.3V + 10% fabricated using ISSI s high-performance CMOS 15 ns: 2.5V-3.6V technology. This highly reliable process coupled with inno- vative circuit design techniques, yields access times as CMOS low power operation: fast as 12ns (3.3V + 10%) and 15ns (2.5V-3.6V) with low 50 mW (typical) operating power consumption. 25 W (typical) standby When CE is HIGH (deselected), the device assumes a TTL compatible interface levels standby mode at which the power dissipation can be Fully static operation: no clock or refresh reduced down with CMOS input levels. required Three state outputs Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Data control for upper and lower bytes Write Enable (WE) controls both writing and reading of the Automotive Temperature Available memory. A data byte allows Upper Byte (UB) and Lower Lead-free available Byte (LB) access. The IS61/64WV6416BLL is packaged in the JEDEC stan- dard 44-pin TSOP-II, 44-pin 400-mil SOJ, and 48-pin mini BGA (6mm x 8mm). FUNCTIONAL BLOCK DIAGRAM 64K x 16 A0-A15 DECODER MEMORY ARRAY VDD GND I/O0-I/O7 I/O Lower Byte COLUMN I/O DATA CIRCUIT I/O8-I/O15 Upper Byte CE OE CONTROL WE CIRCUIT UB LB Copyright 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. www.issi.com 1-800-379-4774 1 Rev. C 10/10/06IS64WV6416BLL IS61WV6416BLL ISSI PIN CONFIGURATIONS 44-Pin TSOP-II 48-Pin mini BGA (6mm x 8mm) 1 2 3 4 5 6 44 A0 A15 1 43 A1 A14 2 42 A2 A13 3 A12 4 41 OE 40 UB A11 5 LB OE A0 A1 A2 NC 39 LB A CE 6 38 I/O15 I/O0 7 UB A3 A4 I/O CE I/O B 8 0 37 I/O14 I/O1 8 36 I/O13 I/O2 9 I/O I/O A5 A6 I/O I/O C 9 10 1 2 35 I/O12 I/O3 10 GND NC A7 I/O I/O VDD 34 GND D 11 3 VDD 11 33 VDD GND 12 I/O GND VDD I/O NC NC 4 E 12 32 I/O11 I/O4 13 31 I/O10 I/O5 14 I/O I/O A14 A15 I/O I/O F 14 13 5 6 30 I/O9 I/O6 15 I/O NC A12 WE 15 A13 I/O G 7 29 I/O8 I/O7 16 28 NC WE 17 NC A8 A9 A10 A11 NC H 27 A3 A10 18 26 A4 A9 19 25 A5 A8 20 24 A6 A7 21 23 NC NC 22 44-Pin SOJ (K) A15 1 44 A0 PIN DESCRIPTIONS A14 2 43 A1 A13 3 42 A2 A0-A15 Address Inputs A12 4 41 OE I/O0-I/O15 Data Inputs/Outputs A11 5 40 UB CE 6 39 LB CE Chip Enable Input I/O0 7 38 I/O15 OE Output Enable Input I/O1 8 37 I/O14 I/O2 9 36 I/O13 WE Write Enable Input I/O3 10 35 I/O12 LB Lower-byte Control (I/O0-I/O7) VDD 11 34 GND GND 12 33 VDD UB Upper-byte Control (I/O8-I/O15) I/O4 13 32 I/O11 NC No Connection I/O5 14 31 I/O10 I/O6 15 30 I/O9 VDD Power I/O7 16 29 I/O8 WE 17 28 NC GND Ground A10 18 27 A3 A9 19 26 A4 A8 20 25 A5 A7 21 24 A6 NC 22 23 NC 2 Integrated Silicon Solution, Inc. www.issi.com 1-800-379-4774 Rev. C 10/10/06