IS61WV6416DALL/DALS IS61WV6416DBLL/DBLS IS64WV6416DBLL/DBLS 64K x 16 HIGH SPEED ASYNCHRONOUS JANUARY 2011 CMOS STATIC RAM DESCRIPTION FEATURES The ISSI IS61WV6416DAxx/DBxx and IS64WV6416DBxx HIGH SPEED: (IS61/64WV6416DALL/DBLL) are high-speed, 1,048,576-bit static RAMs organized as High-speed access time: 8, 10, 12, 20 ns 65,536 words by 16 bits. It is fabricated using ISSI s high- Low Active Power: 135 mW (typical) performance CMOS technology. This highly reliable process Low Standby Power: 12 W (typical) coupled with innovative circuit design techniques, yields CMOS standby high-performance and low power consumption devices. LOW POWER: (IS61/64WV6416DALS/DBLS) When CE is HIGH (deselected), the device assumes a High-speed access time: 25, 35 ns standby mode at which the power dissipation can be re- Low Active Power: 55 mW (typical) duced down with CMOS input levels. Low Standby Power: 12 W (typical) CMOS standby Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Single power supply Write Enable (WE) controls both writing and reading of the Vdd 1.65V to 2.2V (IS61WV6416DAxx) memory. A data byte allows Upper Byte (UB) and Lower Vdd 2.4V to 3.6V (IS61/64WV6416DBxx) Byte (LB) access. Fully static operation: no clock or refresh required The IS61WV6416DAxx/DBxx and IS64WV6416DBxx are packaged in the JEDEC standard 44-pin TSOP Type Three state outputs II, 44-pin 400-mil SOJ and 48-pin Mini BGA (6mm x Data control for upper and lower bytes 8mm). Industrial and Automotive temperature support Lead-free available FUNCTIONAL BLOCK DIAGRAM 64K x 16 A0-A15 DECODER MEMORY ARRAY VDD GND I/O0-I/O7 I/O Lower Byte COLUMN I/O DATA CIRCUIT I/O8-I/O15 Upper Byte CE OE CONTROL WE CIRCUIT UB LB Copyright 2010 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat- est version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason- ably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized b.) the user assume all such risks and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances Integrated Silicon Solution, Inc. www.issi.com 1 Rev. A 11/18/2010IS61WV6416DALL/DALS, IS61WV6416DBLL/DBLS, IS64WV6416DBLL/DBLS TRUTH TABLE I/O PIN Mode WE CE OE LB UB I/O0-I/O7 I/O8-I/O15 VDD Current Not Selected X H X X X High-Z High-Z Isb 1, Isb 2 Output Disabled H L H X X High-Z High-Z Icc X L X H H High-Z High-Z Read H L L L H d out High-Z Icc H L L H L High-Z d out H L L L L d out d out Write L L X L H d In High-Z Icc L L X H L High-Z d In L L X L L d In d In PIN CONFIGURATIONS 44-Pin TSOP-II PIN DESCRIPTIONS A0-A15 Address Inputs I/O0-I/O15 Data Inputs/Outputs CE Chip Enable Input 44 A0 A15 1 43 A1 A14 2 OE Output Enable Input 42 A2 A13 3 WE Write Enable Input 41 OE A12 4 LB Lower-byte Control (I/O0-I/O7) 40 UB A11 5 39 LB CE 6 UB Upper-byte Control (I/O8-I/O15) 38 I/O15 I/O0 7 NC No Connection 37 I/O14 I/O1 8 Vdd Power 36 I/O13 I/O2 9 35 I/O12 I/O3 10 GND Ground 34 GND VDD 11 33 VDD GND 12 32 13 I/O11 I/O4 31 I/O10 I/O5 14 30 I/O9 I/O6 15 29 I/O8 I/O7 16 28 NC WE 17 27 A3 A10 18 26 A4 A9 19 25 A8 20 A5 24 A6 A7 21 23 NC NC 22 2 Integrated Silicon Solution, Inc. www.issi.com Rev. A 11/18/2010