IS65C256AL IS62C256AL 32K x 8 LOW POWER CMOS STATIC RAM FEBRUARY 2020 FEATURES DESCRIPTION The ISSI IS62C256AL/IS65C256AL is a low power, 32,768 Access time: 25 ns, 45 ns word by 8-bit CMOS static RAM. It is fabricated using Low active power: 200 mW (typical) ISSI s high-performance, low power CMOS technology. Low standby power When CE is HIGH (deselected), the device assumes 150 W (typical) CMOS standby a standby mode at which the power dissipation can be 15 mW (typical) operating reduced down to 150 W (typical) at CMOS input levels. Fully static operation: no clock or refresh required Easy memory expansion is provided by using an active LOW Chip Select (CE) input and an active LOW Output TTL compatible inputs and outputs Enable (OE) input. The active LOW Write Enable (WE) Single 5V power supply controls both writing and reading of the memory. Lead-free available The IS62C256AL/IS65C256AL is pin compatible with other Industrial and Automotive temperatures available 32Kx8 SRAMs in plastic SOP or TSOP (Type I) package. FUNCTIONAL BLOCK DIAGRAM 32K X 8 A0-A14 DECODER MEMORY ARRAY VDD GND I/O COLUMN I/O I/O0-I/O7 DATA CIRCUIT CE CONTROL OE CIRCUIT WE Copyright 2020 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized b.) the user assume all such risks and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances Integrated Silicon Solution, Inc. www.issi.com 1 Rev. E1 02/07/2020IS65C256AL IS62C256AL PIN CONFIGURATION PIN CONFIGURATION 28-Pin TSOP 28-Pin SOP OE 22 21 A10 A14 1 28 VDD A11 23 20 CE A12 2 27 WE A9 24 19 I/O7 A7 3 26 A13 A8 25 18 I/O6 A6 4 25 A8 A13 26 17 I/O5 WE 27 16 I/O4 A5 5 24 A9 VDD 28 15 I/O3 A4 6 23 A11 A14 1 14 GND A3 7 22 OE A12 2 13 I/O2 A2 8 21 A10 A7 3 12 I/O1 A1 9 20 CE A6 4 11 I/O0 A5 5 10 A0 19 A0 10 I/O7 A4 6 9 A1 I/O0 11 18 I/O6 A3 7 8 A2 I/O1 12 17 I/O5 I/O2 13 16 I/O4 GND 14 15 I/O3 PIN DESCRIPTIONS TRUTH TABLE A0-A14 Address Inputs Mode WE CE OE I/O Operation VDD Current Not Selected X H X High-Z Isb 1, Isb 2 CE Chip Select Input (Power-down) OE Output Enable Input Output Disabled H L H High-Z Icc 1, Icc 2 WE Write Enable Input Read H L L d out Icc 1, Icc 2 I/O0-I/O7 Input/Output Write L L X d In Icc 1, Icc 2 Vdd Power GND Ground (1) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit Vterm Terminal Voltage with Respect to GND 0.5 to +7.0 V t stg Storage Temperature 65 to +150 C Pt Power Dissipation 0.5 W Iout DC Output Current (LOW) 20 mA Note: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause perma- nent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2 Integrated Silicon Solution, Inc. Rev. E1 02/07/2020