X-On Electronics has gained recognition as a prominent supplier of IS62WV25616DBLL-45BLI-TR SRAM across the USA, India, Europe, Australia, and various other global locations. IS62WV25616DBLL-45BLI-TR SRAM are a product manufactured by ISSI. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

IS62WV25616DBLL-45BLI-TR ISSI

IS62WV25616DBLL-45BLI-TR electronic component of ISSI
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See Product Specifications
Part No.IS62WV25616DBLL-45BLI-TR
Manufacturer: ISSI
Category: SRAM
Description: SRAM Chip Async Single 2.5V/3.3V 4M-bit 256K x 16 45ns 48-Pin BGA T/R
Datasheet: IS62WV25616DBLL-45BLI-TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 6.2642 ea
Line Total: USD 15660.5 
Availability - 0
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0
Ship by Wed. 04 Dec to Tue. 10 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 6.2642

   
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Product Category
RoHS - XON
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We are delighted to provide the IS62WV25616DBLL-45BLI-TR from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IS62WV25616DBLL-45BLI-TR and other electronic components in the SRAM category and beyond.

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IS62WV25616DALL/DBLL, IS65WV25616DBLL 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM MARCH 2015 FEATURES DESCRIPTION The ISSI IS62WV25616DALL and IS62/65WV25616DBLL High-speed access time: 35, 45, 55 ns are high-speed, low power, 4M bit SRAMs organized as CMOS low power operation 256K words by 16 bits. It is fabricated using ISSI s high- perfor mance CMOS technology. This highly reliable process 30 mW (typical) operating coupled with innovative circuit design techniques, yields 6 W (typical) CMOS standby high-performance and low power consumption devices. TTL compatible interface levels When CS1 is HIGH (deselected) or when CS2 is LOW (deselcted) or when CS1 is LOW, CS2 is HIGH and both Single power supply LB and UB are HIGH, the device assumes a standby mode 1.65V--2.2V Vdd (IS62WV25616DALL) at which the power dissipation can be reduced down with CMOS input levels. 2.3V--3.6V Vdd (IS62/65WV25616DBLL) Easy memory expansion is provided by using Chip Enable Fully static operation: no clock or refresh and Output Enable inputs. The active LOW Write Enable (WE) required controls both writing and reading of the memory. A data byte Three state outputs allows Upper Byte (UB) and Lower Byte (LB) access. Data control for upper and lower bytes The IS62WV25616DALL and IS62/65WV25616DBLL are packaged in the JEDEC standard 44-Pin TSOP (TYPE II) Industr ial and Automotive temperature suppor t and 48-pin mini BGA (6mmx8mm). Lead-free available 2 CS option available FUNCTIONAL BLOCK DIAGRAM 256K x 16 A0-A17 DECODER MEMORY ARRAY VDD GND I/O0-I/O7 I/O Lower Byte COLUMN I/O DATA CIRCUIT I/O8-I/O15 Upper Byte CS2 CS1 CONTROL OE CIRCUIT WE UB LB Copyright 2015 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat- est version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be ex- pected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized b.) the user assume all such risks and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances Integrated Silicon Solution, Inc. www.issi.com 1 Rev. D1 3/10/2015IS62WV25616DALL/DBLL, IS65WV25616DBLL PIN CONFIGURATIONS 44-Pin mini TSOP (Type II) 48- ball mini BGA (6mm x 8mm) (Package Code T) (Package Code B) A4 1 44 A5 1 2 3 4 5 6 A3 2 43 A6 A2 3 42 A7 41 A1 4 OE A0 5 40 UB CS1 6 39 LB I/O0 7 38 I/O15 I/O1 8 37 I/O14 A LB OE A0 A1 A2 NC I/O2 9 36 I/O13 I/O3 10 35 I/O12 I/O UB A3 A4 CSI I/O B 8 0 VDD 11 34 GND GND 12 33 VDD I/O I/O A5 A6 I/O I/O C 9 10 1 2 I/O4 13 32 I/O11 I/O5 14 31 I/O10 GND I/O A17 A7 I/O VDD 11 3 D I/O6 15 30 I/O9 VDD I/O NC A16 I/O GND I/O7 16 29 I/O8 E 12 4 WE 17 28 NC I/O I/O A14 A15 I/O I/O F 14 13 5 6 A16 18 27 A8 A15 19 26 A9 I/O NC A12 A13 WE I/O 15 7 G A14 20 25 A10 21 24 A13 A11 NC A8 A9 A10 A11 NC H A12 22 23 A17 48-Pin mini BGA (6mm x 8mm)* 2 CS Option (Package Code B2) 1 2 3 4 5 6 PIN DESCRIPTIONS A0-A17 Address Inputs I/O0-I/O15 Data Inputs/Outputs A LB OE A0 A1 A2 CS2 CS1, CS2 Chip Enable Input I/O UB A3 A4 CS1 I/O B 8 0 OE Output Enable Input I/O I/O A5 A6 I/O I/O 9 10 1 2 C WE Write Enable Input GND I/O A17 A7 I/O VDD D 11 3 LB Lower-byte Control (I/O0-I/O7) VDD I/O NC A16 I/O GND E 12 4 UB Upper-byte Control (I/O8-I/O15) I/O I/O A14 A15 I/O I/O F 14 13 5 6 NC No Connection A12 I/O15 NC A13 WE I/O G 7 Vdd Power NC A8 A9 A10 A11 NC H GND Ground *Available upon request 2 Integrated Silicon Solution, Inc. www.issi.com Rev. D1 3/10/2015

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
Integrated Silicon Solution ()
Integrated Silicon Solution (ISSI)
INTEGRATED SILICON SOLUTIONS INC
ISSI
ISSI(Integrated Silicon Solution)
ISSI, Integrated Silicon Solution Inc
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