X-On Electronics has gained recognition as a prominent supplier of IS62WV5128BLL-55BI SRAM across the USA, India, Europe, Australia, and various other global locations. IS62WV5128BLL-55BI SRAM are a product manufactured by ISSI. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

IS62WV5128BLL-55BI ISSI

IS62WV5128BLL-55BI electronic component of ISSI
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See Product Specifications
Part No.IS62WV5128BLL-55BI
Manufacturer: ISSI
Category: SRAM
Description: SRAM Chip Async Single 3.3V 4M-bit 512K x 8 55ns 36-Pin Mini-BGA
Datasheet: IS62WV5128BLL-55BI Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
480: USD 6.3204 ea
Line Total: USD 3033.79 
Availability - 0
MOQ: 480  Multiples: 480
Pack Size: 480
Availability Price Quantity
0
Ship by Wed. 04 Dec to Tue. 10 Dec
MOQ : 480
Multiples : 480
480 : USD 6.3204

   
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We are delighted to provide the IS62WV5128BLL-55BI from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IS62WV5128BLL-55BI and other electronic components in the SRAM category and beyond.

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IS62WV5128ALL IS62WV5128BLL 512K x 8 LOW VOLTAGE, JANUARY 2008 ULTRA LOW POWER CMOS STATIC RAM FEATURES DESCRIPTION The ISSI IS62WV5128ALL / IS62WV5128BLL are high- High-speed access time: 55ns, 70ns speed, 4M bit static RAMs organized as 512K words by 8 CMOS low power operation bits. It is fabricated using ISSI s high-performance CMOS technology. This highly reliable process coupled with 36 mW (typical) operating innovative circuit design techniques, yields high- 9 W (typical) CMOS standby performance and low power consumption devices. TTL compatible interface levels When CS1 is HIGH (deselected) the device assumes a standby mode at which the power dissipation can be Single power supply reduced down with CMOS input levels. 1.65V 2.2V VDD (IS62WV5128ALL) Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable 2.5V 3.6V VDD (IS62WV5128BLL) (WE) controls both writing and reading of the memory. Fully static operation: no clock or refresh The IS62WV5128ALL and IS62WV5128BLL are packaged required in the JEDEC standard 32-pin TSOP (TYPE I), 32-pin sTSOP (TYPE I), 32-pin TSOP (Type II), 32-pin SOP and Three state outputs 36-pin mini BGA. Industrial temperature available Lead-free available FUNCTIONAL BLOCK DIAGRAM 512K x 8 A0-A18 DECODER MEMORY ARRAY VDD GND I/O COLUMN I/O DATA I/O0-I/O7 CIRCUIT CS1 CONTROL CIRCUIT OE WE Copyright 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. www.issi.com 1 Rev. E 01/29/08IS62WV5128ALL, IS62WV5128BLL PIN DESCRIPTIONS A0-A18 Address Inputs CS1 Chip Enable 1 Input OE Output Enable Input WE Write Enable Input I/O0-I/O7 Input/Output NC No Connection VDD Power GND Ground 36-pin mini BGA (B) (6mm x 8mm) (Package Code B) 1 2 3 4 5 6 A A0 A1 NC A3 A6 A8 B I/O4 A2 WE A4 A7 I/O0 I/O5 NC A5 I/O1 C GND VDD D VDD GND E F I/O6 A18 A17 I/O2 I/O7 OE A16 A15 I/O3 G CS1 A9 A10 A11 A12 A13 A14 H 2 Integrated Silicon Solution, Inc. www.issi.com Rev. E 01/29/08

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
Integrated Silicon Solution ()
Integrated Silicon Solution (ISSI)
INTEGRATED SILICON SOLUTIONS INC
ISSI
ISSI(Integrated Silicon Solution)
ISSI, Integrated Silicon Solution Inc
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