X-On Electronics has gained recognition as a prominent supplier of IS64WV12816DBLL-12CTLA3TR SRAM across the USA, India, Europe, Australia, and various other global locations. IS64WV12816DBLL-12CTLA3TR SRAM are a product manufactured by ISSI. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

IS64WV12816DBLL-12CTLA3TR ISSI

IS64WV12816DBLL-12CTLA3TR electronic component of ISSI
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Part No.IS64WV12816DBLL-12CTLA3TR
Manufacturer: ISSI
Category: SRAM
Description: SRAM Chip Async Single 2.5V/3.3V 2M-bit 128K x 16 12ns Automotive 44-Pin TSOP-II T/R
Datasheet: IS64WV12816DBLL-12CTLA3TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 7.8322 ea
Line Total: USD 7832.2 
Availability - 0
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1000
Multiples : 1000
1000 : USD 7.8322

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Access Time
Maximum Clock Frequency
Mounting Style
Packaging
Brand
Address Bus
Operating Temp Range
Package Type
Pin Count
Density
Number Of Words
Word Size
Sync/Async
Operating Temperature Classification
Number Of Ports
Architecture
Rad Hardened
Operating Supply Voltage Typ
Operating Supply Voltage Min
Operating Supply Voltage Max
Supply Current
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We are delighted to provide the IS64WV12816DBLL-12CTLA3TR from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IS64WV12816DBLL-12CTLA3TR and other electronic components in the SRAM category and beyond.

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IS61WV12816DALL/DALS IS61WV12816DBLL/DBLS IS64WV12816DBLL/DBLS 128K x 16 HIGH SPEED ASYNCHRONOUS JANUARY 2013 CMOS STATIC RAM DESCRIPTION FEATURES The ISSI IS61WV12816DAxx/DBxx and IS64WV12816D- HIGH SPEED: (IS61/64WV12816DALL/DBLL) Bxx are high-speed, 2,097,152-bit static RAMs organized High-speed access time: 8, 10, 12, 20 ns as 131,072 words by 16 bits. It is fabr icated using ISSI s Low Active Power : 135 mW (typical) high-perfor mance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, Low Standby Power : 12 W (typical) yields high-performance and low power consumption CMOS standby devices. LOW POWER: (IS61/64WV12816DALS/DBLS) High-speed access time: 25, 35 ns When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be re- Low Active Power : 55 mW (typical) duced down with CMOS input levels. Low Standby Power : 12 W (typical) CMOS standby Easy memor y expansion is provided by using Chip Enable Single power supply and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the Vdd 1.65V to 2.2V (IS61WV12816DAxx) memory. A data byte allows Upper Byte (UB) and Lower Vdd 2.4V to 3.6V (IS61/64WV12816DBxx) Byte (LB) access. Fully static operation: no clock or refresh The IS61WV12816DAxx/DBxx and IS64WV12816DBxx required are packaged in the JEDEC standard 44-pin TSOP Type Three state outputs II and 48-pin Mini BGA (6mm x 8mm). Data control for upper and lower bytes Industr ial and Automotive temperature suppor t Lead-free available FUNCTIONAL BLOCK DIAGRAM 128K x 16 A0-A16 DECODER MEMORY ARRAY VDD GND I/O0-I/O7 I/O Lower Byte COLUMN I/O DATA CIRCUIT I/O8-I/O15 Upper Byte CE OE CONTROL WE CIRCUIT UB LB Copyright 2013 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time with - out notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. www.issi.com 1 Rev. E 01/10/2013IS61WV12816DALL/DALS, IS61WV12816DBLL/DBLS, IS64WV12816DBLL/DBLS TRUTH TABLE I/O PIN Mode WE CE OE LB UB I/O0-I/O7 I/O8-I/O15 VDD Current Not Selected X H X X X High-Z High-Z Isb 1, Isb 2 Output Disabled H L H X X High-Z High-Z Icc X L X H H High-Z High-Z Read H L L L H d out High-Z Icc H L L H L High-Z d out H L L L L d out d out Write L L X L H d In High-Z Icc L L X H L High-Z d In L L X L L d In d In PIN CONFIGURATION 44-Pin TSOP (Type II) (T) PIN DESCRIPTIONS A0-A16 Address Inputs I/O0-I/O15 Data Inputs/Outputs 44 A4 1 A5 CE Chip Enable Input A3 2 43 A6 OE Output Enable Input A2 3 42 A7 WE Write Enable Input A1 4 41 OE A0 5 40 UB LB Lower-byte Control (I/O0-I/O7) CE 6 39 LB UB Upper-byte Control (I/O8-I/O15) I/O0 7 38 I/O15 I/O1 8 37 I/O14 NC No Connection I/O2 9 36 I/O13 Vdd Power 35 I/O12 I/O3 10 GND Ground VDD 11 34 GND GND 12 33 VDD I/O4 13 32 I/O11 I/O5 14 31 I/O10 I/O6 15 30 I/O9 I/O7 16 29 I/O8 WE 17 28 NC A16 18 27 A8 26 A15 19 A9 A14 20 25 A10 A13 21 24 A11 A12 22 23 NC 2 Integrated Silicon Solution, Inc. www.issi.com Rev. E 01/10/2013

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
Integrated Silicon Solution ()
Integrated Silicon Solution (ISSI)
INTEGRATED SILICON SOLUTIONS INC
ISSI
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