IS64WV25616EDBLL 256K x 16 HIGH SPEED ASYNCHRONOUS PRELIMINARY INFORMATION JANUARY 2011 CMOS STATIC RAM WITH ECC DESCRIPTION FEATURES The ISSI IS64WV25616EDBLL is a high-speed, 4,194,304- High-speed access time: 10 ns bit static RAMs organized as 262,144 words by 16 bits. It is Low Active Power: 85 mW (typical) fabricated using ISSI s high-performance CMOS technol- Low Standby Power: 7 mW (typical) ogy. This highly reliable process coupled with innovative CMOS standby circuit design techniques, yields high-performance and low power consumption devices. Single power supply Vdd 2.4V to 3.6V (IS64WV25616EDBLL) When CE is HIGH (deselected), the device assumes a Fully static operation: no clock or refresh standby mode at which the power dissipation can be re- required duced down with CMOS input levels. Three state outputs Easy memory expansion is provided by using Chip Enable Data control for upper and lower bytes and Output Enable inputs, CE and OE. The active LOW Industrial and Automotive temperature support Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Lead-free available Byte (LB) access. Error Detection and Error Correction The IS64WV25616EDBLL is packaged in the JEDEC stan- dard 44-pin TSOP-II and 48-pin Mini BGA (6mm x 8mm). FUNCTIONAL BLOCK DIAGRAM Memory Memory A0-A17 ECC ECC Lower IO Array- Upper IO Array- Decoder 256K 256K Array- Array- x4 x4 256Kx8 256Kx8 8 4 8 4 8 8 12 IO0-7 ECC I/O Data 8 8 12 Column I/O Circuit IO8-15 ECC /CE /OE Control /WE Circuit /UB /LB Copyright 2011 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat- est version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason- ably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized b.) the user assume all such risks and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances Integrated Silicon Solution, Inc. www.issi.com 1 Rev. 00A 11/19/2010IS64WV25616EDBLL TRUTH TABLE I/O PIN Mode WE CE OE LB UB I/O0-I/O7 I/O8-I/O15 VDD Current Not Selected X H X X X High-Z High-Z Isb 1, Isb 2 Output Disabled H L H X X High-Z High-Z Icc X L X H H High-Z High-Z Read H L L L H d out High-Z Icc H L L H L High-Z d out H L L L L d out d out Write L L X L H d In High-Z Icc L L X H L High-Z d In L L X L L d In d In PIN CONFIGURATIONS PIN DESCRIPTIONS A0-A17 Address Inputs 44-Pin TSOP (Type II) I/O0-I/O15 Data Inputs/Outputs CE Chip Enable Input OE Output Enable Input A0 1 44 A17 WE Write Enable Input A1 2 43 A16 A2 3 42 A15 LB Lower-byte Control (I/O0-I/O7) A3 4 41 OE UB Upper-byte Control (I/O8-I/O15) 40 UB A4 5 CE 6 39 LB NC No Connection I/O0 7 38 I/O15 Vdd Power I/O1 8 37 I/O14 I/O2 9 36 I/O13 GND Ground I/O3 10 35 I/O12 VDD 11 34 GND GND 12 33 VDD I/O4 13 32 I/O11 I/O5 14 31 I/O10 I/O6 15 30 I/O9 I/O7 16 29 I/O8 WE 17 28 NC A5 18 27 A14 A6 19 26 A13 A7 20 25 A12 A8 21 24 A11 A9 22 23 A10 *soJ package under evaluation. 2 Integrated Silicon Solution, Inc. www.issi.com Rev. 00A 11/19/2010