CPC3708 350V N-Channel Depletion Mode FET INTEGRATED CIRCUITS DIVISION Parameter Rating Units Description The CPC3708 is a N-channel, depletion mode Field Drain-to-Source Voltage - V 350 V (BR)DSX Effect Transistor (FET) that is available in an Max On-Resistance - R 14 DS(on) SOT-223 package (CPC3708Z) and an SOT-89 Max Power package (CPC3708C). Both utilize IXYS Integrated SOT-89 Package 1.1 Circuits Divisions proprietary third-generation W SOT-223 Package 2.5 vertical DMOS process that realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process Features yields a highly reliable device, particularly for 350V Drain-to-Source Voltage use in difficult application environments such as Depletion Mode Device Offers Low R DS(on) telecommunications, security, and power supplies. at Cold Temperatures CPC3708Z and the CPC3708C have a typical Low On-Resistance: 8 (Typical) 25C on-resistance of 8 and a drain-to-source voltage Low V Voltage GS(off) of 350V. As with all MOS devices, the FET structure High Input Impedance prevents thermal runaway and thermally induced Low Input and Output Leakage secondary breakdown. Small Package Size SOT-89 and SOT-223 PCB Space and Cost Savings Ordering Information Applications Part Number Description LED Drive Circuits CPC3708CTR SOT-89: Tape and Reel (4000/Reel) Telecommunications CPC3708ZTR SOT-223: Tape and Reel (1000/Reel) Normally On Switches Ignition Modules Converters Security Power Supplies Regulators Circuit Symbol Package Pinout: D D G 4 123 S G D S Pin Number Name 1 GATE 2 DRAIN 3 SOURCE 4 DRAIN DS-CPC3708-R04 1 www.ixysic.comCPC3708 INTEGRATED CIRCUITS DIVISION Absolute Maximum Ratings 25C Absolute Maximum Ratings are stress ratings. Stresses in Parameter Ratings Units excess of these ratings can cause permanent damage to the Drain-to-Source Voltage (V ) 350 V (BR)DSX device. Functional operation of the device at conditions beyond Gate-to-Source Voltage (V ) 20 V GS those indicated in the operational sections of this data sheet is 1 Total Package Dissipation not implied. SOT-89 1.1 W Typical values are characteristic of the device at +25C, and SOT-223 2.5 are the result of engineering evaluations. They are provided for o Operational Temperature -40 to +110 C information purposes only, and are not part of the manufacturing o Storage Temperature -40 to +125 C testing requirements. 1 Mounted on 1 x1 FR4 board. o Electrical Characteristics 25 C (Unless Otherwise Specified) Parameter Symbol Conditions Min Typ Max Units Gate-to-Source Voltage V I =60mA, V =5V -1.005 - -1.735 V GS D DS Gate-to-Source Off Voltage V I =2A, V =10V, V =100V -2 - -3.6 V GS(off) D DS DS V = -5V, V =190V - - 20 nA GS DS Drain-to-Source Leakage Current I DS(off) V = -5V, V =350V - - 1 A GS DS Drain Current V = -2.7V, V =5V, V =50V - - 5 mA GS DS DS I D V = -0.57V, V =5V 130 - - mA GS DS On-Resistance R V = -0.35V, I =50mA - 8 14 DS(on) GS DS Gate Leakage Current I V =20V - - 100 nA GSS GS Gate Capacitance C V = V =0V - - 300 pF ISS DS GS Thermal Impedance Package Parameter Symbol Conditions Min Typ Max Units SOT-89 Junction to Case R 50 JC - -- Junction to Ambient R 90 JA C/W SOT-223 Junction to Case R 14 JC - -- Junction to Ambient R 55 JA 2 R04 www.ixysic.com