X-On Electronics has gained recognition as a prominent supplier of CPC3708CTR MOSFETs across the USA, India, Europe, Australia, and various other global locations. CPC3708CTR MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

CPC3708CTR IXYS

CPC3708CTR electronic component of IXYS
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See Product Specifications
Part No.CPC3708CTR
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET N-Channel Depletion Mode FET
Datasheet: CPC3708CTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7711 ea
Line Total: USD 0.77 
Availability - 7078
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7078
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.7711
10 : USD 0.5819
100 : USD 0.4631
500 : USD 0.3982
1000 : USD 0.3641
2000 : USD 0.3487
4000 : USD 0.3388
8000 : USD 0.3344

3118
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.162
5 : USD 0.6916
25 : USD 0.6356
33 : USD 0.5082
91 : USD 0.4802

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CPC3708CTR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CPC3708CTR and other electronic components in the MOSFETs category and beyond.

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CPC3708 350V N-Channel Depletion Mode FET INTEGRATED CIRCUITS DIVISION Parameter Rating Units Description The CPC3708 is a N-channel, depletion mode Field Drain-to-Source Voltage - V 350 V (BR)DSX Effect Transistor (FET) that is available in an Max On-Resistance - R 14 DS(on) SOT-223 package (CPC3708Z) and an SOT-89 Max Power package (CPC3708C). Both utilize IXYS Integrated SOT-89 Package 1.1 Circuits Divisions proprietary third-generation W SOT-223 Package 2.5 vertical DMOS process that realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process Features yields a highly reliable device, particularly for 350V Drain-to-Source Voltage use in difficult application environments such as Depletion Mode Device Offers Low R DS(on) telecommunications, security, and power supplies. at Cold Temperatures CPC3708Z and the CPC3708C have a typical Low On-Resistance: 8 (Typical) 25C on-resistance of 8 and a drain-to-source voltage Low V Voltage GS(off) of 350V. As with all MOS devices, the FET structure High Input Impedance prevents thermal runaway and thermally induced Low Input and Output Leakage secondary breakdown. Small Package Size SOT-89 and SOT-223 PCB Space and Cost Savings Ordering Information Applications Part Number Description LED Drive Circuits CPC3708CTR SOT-89: Tape and Reel (4000/Reel) Telecommunications CPC3708ZTR SOT-223: Tape and Reel (1000/Reel) Normally On Switches Ignition Modules Converters Security Power Supplies Regulators Circuit Symbol Package Pinout: D D G 4 123 S G D S Pin Number Name 1 GATE 2 DRAIN 3 SOURCE 4 DRAIN DS-CPC3708-R04 1 www.ixysic.comCPC3708 INTEGRATED CIRCUITS DIVISION Absolute Maximum Ratings 25C Absolute Maximum Ratings are stress ratings. Stresses in Parameter Ratings Units excess of these ratings can cause permanent damage to the Drain-to-Source Voltage (V ) 350 V (BR)DSX device. Functional operation of the device at conditions beyond Gate-to-Source Voltage (V ) 20 V GS those indicated in the operational sections of this data sheet is 1 Total Package Dissipation not implied. SOT-89 1.1 W Typical values are characteristic of the device at +25C, and SOT-223 2.5 are the result of engineering evaluations. They are provided for o Operational Temperature -40 to +110 C information purposes only, and are not part of the manufacturing o Storage Temperature -40 to +125 C testing requirements. 1 Mounted on 1 x1 FR4 board. o Electrical Characteristics 25 C (Unless Otherwise Specified) Parameter Symbol Conditions Min Typ Max Units Gate-to-Source Voltage V I =60mA, V =5V -1.005 - -1.735 V GS D DS Gate-to-Source Off Voltage V I =2A, V =10V, V =100V -2 - -3.6 V GS(off) D DS DS V = -5V, V =190V - - 20 nA GS DS Drain-to-Source Leakage Current I DS(off) V = -5V, V =350V - - 1 A GS DS Drain Current V = -2.7V, V =5V, V =50V - - 5 mA GS DS DS I D V = -0.57V, V =5V 130 - - mA GS DS On-Resistance R V = -0.35V, I =50mA - 8 14 DS(on) GS DS Gate Leakage Current I V =20V - - 100 nA GSS GS Gate Capacitance C V = V =0V - - 300 pF ISS DS GS Thermal Impedance Package Parameter Symbol Conditions Min Typ Max Units SOT-89 Junction to Case R 50 JC - -- Junction to Ambient R 90 JA C/W SOT-223 Junction to Case R 14 JC - -- Junction to Ambient R 55 JA 2 R04 www.ixysic.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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