X-On Electronics has gained recognition as a prominent supplier of CPC3720CTR MOSFETs across the USA, India, Europe, Australia, and various other global locations. CPC3720CTR MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

CPC3720CTR IXYS

CPC3720CTR electronic component of IXYS
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See Product Specifications
Part No.CPC3720CTR
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET N Ch Dep Mode FET 250V
Datasheet: CPC3720CTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.12 ea
Line Total: USD 1.12 
Availability - 549
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
549
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.12
5 : USD 0.6356
25 : USD 0.581
37 : USD 0.455
102 : USD 0.4312

   
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We are delighted to provide the CPC3720CTR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CPC3720CTR and other electronic components in the MOSFETs category and beyond.

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The CPC3720CTR is an N-channel Depletion Mode Field Effect Transistor (FET) manufactured by IXYS. It offers a maximum drain-source breakdown voltage of 250V, as well as high-speed switching and ultra-low on-state resistance. It is well-suited for various communications assembly, automotive, and power management applications. The FET features an integrated thermal shut-down protection circuit and an Ohmic-series gate resistor, both of which help to protect the FET from over-voltage and over-current damage. The device's operating temperature range is -55°C to +150°C.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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