DHG30I600HA IXYS

0614 DHG 30 I 600HA advanced V = 600 V RRM Sonic-FRD I = 30 A FAV High Performance Fast Recovery Diode t = 35 ns rr Low Loss and Soft Recovery Single Diode Part number (Marking on product) 3 1 DHG 30 I 600HA Features / Advantages: Applications: Package: Planar passivated chips Antiparallel diode for high frequency TO-247AD Very low leakage current switching devices Industry standard outline Very short recovery time Antisaturation diode Epoxy meets UL 94V-0 Improved thermal behaviour Snubber diode RoHS compliant Very low Irm-values Free wheeling diode Very soft recovery behaviour Rectifiers in switch mode power Avalanche voltage rated for reliable supplies (SMPS) operation Uninterruptible power supplies (UPS) Soft reverse recovery for low EMI/RFI Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch R a t i n g s Symbol Definition Conditions min. typ. max. Unit max. repetitive reverse voltage V T = 25 C 600 V RRM VJ reverse current I V = 600 = 25 C 50 V T A R R VJ V = 600 = C V T 125 5 mA R VJ forward voltage V I=A30 T = 25 C 2.36 V F F VJ I=A60 V F I=A30 T=125C 2.20 V F VJ I=A60 V F average forward current I rectangular, d = 0.5 T =85C 30 A FAV C threshold voltage V T =150C 1.31 V F0 VJ for power loss calculation only slope resistance r 28.6 m F thermal resistance junction to case R 0.70 K/W thJC virtual junction temperature T -55 150 C VJ total power dissipation P = 25 C 180 W T tot C max. forward surge current I t =10 ms (50 Hz), sine T =45C 200 A FSM p VJ max. reverse recovery current =25 C 12 A I T VJ RM I=A30 F T =125 C A VJ -di /dt = 600 A/s F t rr reverse recovery time T =25 C 35 ns VJ V=V400 R ns T =125 C VJ junction capacitance C V=V300 f = 1 MHz T=25C pF J R VJ non-repetitive avalanche energy E I =A L = 100 H T = 25 C tbd mJ AS AS VJ repetitive avalanche current I V = 1.5V typ. f = 10 kHz tbd A A R AR IXYS reserves the right to change limits, conditions and dimensions. * Data according to IEC 60747and per diode unless otherwise specified 2006 IXYS all rights reserved0614 DHG 30 I 600HA advanced Ratings Conditions Symbol Definition min. typ. max. Unit RMS current I per pin* 70 A RMS thermal resistance case to heatsink R 0.25 K/W thCH M mounting torque 0.8 1.2 Nm D mounting force with clip F 20 120 N C storage temperature T -55 150 C stg Weight 6 g * Irms is typically limited by: 1. pin-to-chip resistance or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Outlines TO-247AD Dim. Millimeter Inches Min. Max. Min. Max. A 19.81 20.32 0.780 0.800 B 20.80 21.46 0.819 0.845 C 15.75 16.26 0.610 0.640 D 3.55 3.65 0.140 0.144 E 4.32 5.49 0.170 0.216 F 5.4 6.2 0.212 0.244 G 1.65 2.13 0.065 0.084 H - 4.5 - 0.177 J 1.0 1.4 0.040 0.055 K 10.8 11.0 0.426 0.433 L 4.7 5.3 0.185 0.209 M 0.4 0.8 0.016 0.031 N 1.5 2.49 0.087 0.102 IXYS reserves the right to change limits, conditions and dimensions. * Data according to IEC 60747and per diode unless otherwise specified 2006 IXYS all rights reserved