Preliminary Technical Information TM P CH. N CH. Polar P & N-Channel FMP26-02P Power MOSFET V - 200V 200V DSS Common Drain Topology 3 I - 17A 26A 4 D25 T1 55 R 170m 60m DS(on) 4 3 t 240ns 150ns T2 (Electrically Isolated Tab) rr(typ) 11 2 2 TM ISOPLUS i4-Pak Symbol Test Conditions Maximum Ratings T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg V 50/60H , RMS, t = 1min, Leads-to-Tab 2500 ~V ISOLD Z T 1.6mm (0.062 in.) from Case for 10s 300 C L T Plastic Body for 10s 260 C SOLD 1 Isolated Tab F Mounting Force 20..120 / 4.5..27 N/lb. C 5 Symbol Test Conditions Characteristic Values Min. Typ. Max. Features C Coupling Capacitance Between Shorted 40 pF P z Pins and Mounting Tab in the Case Silicon Chip on Direct-Copper Bond (DCB) Substrate d , d Pin - Pin 1.7 mm S A - UL Recognized Package d , d Pin - Backside Metal 5.5 mm - Isolated Mounting Surface S A - 2500V~ Electrical Isolation Weight 9 g z Avalanche Rated z Low Q G z Low Drain-to-Tab Capacitance P - CHANNEL z Low Package Inductance Symbol Test Conditions Maximum Ratings Advantages V T = 25C to 150C - 200 V DSS J z Low Gate Drive Requirement V T = 25C to 150C, R = 1M - 200 V z DGR J GS High Power Density z V Continuous 20 V Low Drain to Ground Capacitance GSS z Fast Switching V Transient 30 V GSM I T = 25C -17 A Applications D25 C I T = 25C, Pulse Width Limited by T - 70 A DM C JM z DC and AC Motor Drives I T = 25C - 26 A z A C Class AB Audio Amplifiers z E T = 25C 1.5 J Multi-Phase DC to DC Converters AS C z Industrial Battery Chargers P T = 25C 125 W D C z Switching Power Supplies 2011 IXYS CORPORATION, All Rights Reserved DS100033A(04/11)FMP26-02P TM ISOPLUS i4-Pak Outline Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = - 250A - 200 V DSS GS D V V = V , I = - 250A - 2.5 - 4.5 V GS(th) DS GS D I V = 20 V, V = 0V 100 nA GSS GS DS I V = V , V = 0V -10 A DSS DS DSS GS T = 125C - 150 A J R V = -10V, I = -13A, Note 1 170 m DS(on) GS D g V = -10V, I = -13A, Note 1 10 17 S fs DS D C 2740 pF iss C V = 0V, V = - 25 V, f = 1 MHz 540 pF oss GS DS C 100 pF rss t 18 ns d(on) Resistive Switching Times t 33 ns r V = -10V, V = 0.5 z V , I = -13A GS DS DSS D t 46 ns d(off) R = 3.3 (External) G t 21 ns f Q 56 nC g(on) Q V = -10V, V = 0.5 z V , I = -13A 18 nC gs GS DS DSS D Ref: IXYS CO 0077 R0 Q 20 nC gd R 1.0 C/W thJC R 0.15 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V -17 A S GS I Repetitive, Pulse Width Limited by T -104 A SM JM V I = -13A, V = 0V, Note 1 - 3.2 V SD F GS t I = -13A, di/dt = 100A/s 240 ns rr F Q V = -100V, V = 0V 2.2 C RM R GS I -18 A RM IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537