Advance Technical Information TM P CH. N CH. Trench P & N-Channel FMP76-01T Power MOSFET V - 100V 100V DSS Common Drain Topology 3 4 I - 54A 62A D25 T1 5 5 R 24m 11m DS(on) 4 3 t 70ns 67ns T2 rr(typ) 1 1 2 2 TM ISOPLUS i4-Pak Symbol Test Conditions Maximum Ratings T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg V 50/60H , RMS, t = 1min, leads-to-tab 2500 ~V 1 ISOLD Z Isolated Tab T 1.6mm (0.062 in.) from case for 10s 300 C L T Plastic body for 10s 260 C SOLD 5 F Mounting force 20..120 / 4.5..27 N/lb. C Features z Silicon chip on Direct-Copper Bond Symbol Test Conditions Characteristic Values (DCB) substrate Min. Typ. Max. - UL recognized package C Coupling capacitance between shorted 40 pF - Isolated mounting surface P pins and mounting tab in the case - 2500V electrical isolation z Avalanche rated d ,d pin - pin 1.7 mm z S A Low Q G d ,d pin - backside metal 5.5 mm z S A Low Drain-to-Tab capacitance z Low package inductance Weight 9 g Advantages P - CHANNEL z Low gate drive requirement z Symbol Test Conditions Maximum Ratings High power density z Low drain to ground capacitance V T = 25C to 150C - 100 V DSS J z Fast switching V T = 25C to 150C, R = 1M - 100 V DGR J GS V Continuous 20 V GSS Applications V Transient 30 V GSM z I T = 25C - 54 A DC and AC motor drives D25 C z Class AB audio amplifiers I T = 25C, pulse width limited by T - 230 A DM C JM z Multi-phase DC to DC converters I T = 25C - 38 A z A C Industrial battery chargers z E T = 25C 1.0 J Switching power supplies AS C P T = 25C 132 W D C 2008 IXYS CORPORATION, All rights reserved DS100037(09/08)FMP76-01T 2 Symbol Test Conditions Characteristic Values TM ISOPLUS i4-Pak Outline (T = 25C unless otherwise specified) Min. Typ. Max. J BV V = 0V, I = - 250 A - 100 V DSS GS D V V = V , I = - 250A - 2.0 - 4.0 V GS(th) DS GS D I V = 20 V, V = 0V 100 nA GSS GS DS I V = V , V = 0V -15 A DSS DS DSS GS T = 125C - 750 A J R V = -10V, I = - 38A, Note 1 24 m DS(on) GS D g V = -10V, I = - 38A, Note 1 35 58 S fs DS D C 13.7 nF iss C V = 0V, V = - 25V, f = 1MHz 890 pF oss GS DS C 275 pF rss t Resistive Switching Times 25 ns d(on) t V = -10V, V = 0.5 z V , I = - 38A 40 ns r GS DS DSS D t R = 1 (External) 52 ns d(off) G t 20 ns f Q 197 nC g(on) Q V = -10V, V = 0.5 z V , I = - 38A 65 nC gs GS DS DSS D Ref: IXYS CO 0077 R0 Q 65 nC gd R 0.95 C/W thJC R 0.15 C/W thCS Drain-Source Diode Characteristic Values (T = 25C unless otherwise specified) J 2 Symbol Test Conditions Min. Typ. Max. I V = 0V - 54 A S GS I Repetitive, pulse width limited by T - 304 A SM JM V I = - 38A, V = 0V, Note 1 - 1.3 V SD F GS t I = - 38A, di/dt = 100A/s 70 ns rr F Q V = - 50V, V = 0V 215 nC RM R GS I - 6 A RM IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537