X-On Electronics has gained recognition as a prominent supplier of IXFA26N50P3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXFA26N50P3 MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IXFA26N50P3 IXYS

IXFA26N50P3 electronic component of IXYS
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Part No.IXFA26N50P3
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET N-Channel: Power MOSFET w/Fast Diode
Datasheet: IXFA26N50P3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 6.692 ea
Line Total: USD 6.69 
Availability - 74
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
74
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 6.692
3 : USD 5.922
4 : USD 5.306
9 : USD 5.012
50 : USD 4.956

   
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Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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We are delighted to provide the IXFA26N50P3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXFA26N50P3 and other electronic components in the MOSFETs category and beyond.

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The IXFA26N50P3 is a power MOSFET with a fast diode manufactured by the IXYS Corporation. It is an N-channel MOSFET with a maximum drain-source voltage (VDSS) of 500V and a maximum drain current (ID) of 50A. Its maximum gate-source voltage (VGS) is 9V. It is an optimized device for general-purpose switching applications and has an on-board fast diode for over-voltage protection. It has a low total gate charge (Qg) for fast switching and a maximum operating temperature of 175°C for extended temperature range applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR
Littelfuse/IXYS
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