TM HiperFET V = 1000V IXFA4N100Q DSS Power MOSFETs I = 4A IXFP4N100Q D25 Q-Class R 3.0 DS(on) N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions Maximum Ratings D (Tab) V T = 25C to 150C 1000 V DSS J V T = 25C to 150C, R = 1M 1000 V DGR J GS TO-220AB (IXFP) V Continuous 20 V GSS V Transient 30 V GSM I T = 25C4A D25 C I T = 25C, Pulse Width Limited by T 16 A DM C JM G D D (Tab) I T = 25C4A S A C E T = 25C 700 mJ AS C dv/dt I I , V V ,T 150C 5 V/ns S DM DD DSS J G = Gate D = Drain S = Source Tab = Drain P T = 25C 150 W D C T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg Features T Maximum Lead Temperature for Soldering 300 C L z International Standard Packages T Plastic Body for 10s 260 C SOLD z Avalanche Rated M Mounting Force (TO-263) 10..65/2.2..14.6 Nm/lb.in. z C Fast Intrinsic Diode M Mounting Torque (TO-220) 1.13/10 Nm/lb.in. d z Low Q G z Weight TO-263 2.5 g Low R DS(on) TO-220 3.0 g z Low Drain-to-Tab Capacitance z Low Package Inductance Advantages Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J z High Power Density z BV V = 0V, I = 1mA 1000 V Easy to Mount DSS GS D z Space Savings V V = V , I = 1.5mA 2.5 4.5 V GS(th) DS GS D I V = 20V, V = 0V 100 nA GSS GS DS Applications I V = V , V = 0V 50 A DSS DS DSS GS z T = 125C 1 mA DC-DC Converters J z Battery Chargers R V = 10V, I = 0.5 I , Note 1 3.0 DS(on) GS D D25 z Switch-Mode and Resonant-Mode Power Supplies z DC Choppers z Temperature and Lighting Controls 2011 IXYS CORPORATION, All Rights Reserved DS98705B(04/11)IXFA4N100Q IXFP4N100Q Symbol Test Conditions Characteristic Values TO-263 Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 1.5 2.5 S fs DS D D25 C 1050 pF iss C V = 0V, V = 25V, f = 1MHz 120 pF oss GS DS C 30 pF rss t 17 ns d(on) Resistive Switching Times t 15 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 32 ns d(off) R = 4.7 (External) G t 18 ns f Q 39 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 9 nC gs GS DS DSS D D25 Q 23 nC gd R 0.80 C/W thJC R TO-220 0.50 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 4 A S GS TO-220 Outline I Repetitive, Pulse Width Limited by T 16 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 250 ns rr I = I , -di/dt = 100A/s F S Q 0.52 C RM V = 100V, V = 0V R GS I 1.80 A RM Note 1. Pulse test, t 300s, duty cycle, d 2%. Pins: 1 - Gate 2 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537