X-On Electronics has gained recognition as a prominent supplier of IXFB100N50P MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXFB100N50P MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IXFB100N50P IXYS

Name: IXFB100N50P
Brand: IXYS
SKU: IXFB100N50P_IXYS
Availability: InStock
Rating: 5 (11 reviews)

IXFB100N50P electronic component of IXYS

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See Product Specifications

Part No.	IXFB100N50P
Manufacturer:	IXYS
Category:	MOSFETs
Description:	MOSFET 100 Amps 500V 0.05 Ohms Rds
Datasheet:	IXFB100N50P Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 36.2135 ea
Line Total: USD 36.21

Availability - 37
Ship by Mon. 07 Jul to Wed. 09 Jul

MOQ: 1 Multiples: 1
Pack Size: 1

IXFB100N50P More Buying Options & Price Grid(s)

Please wait...

Availability Price Buy Price Quantity

37

Ship by Mon. 07 Jul to Wed. 09 Jul

MOQ : 1
Multiples : 1

1 : USD 36.2135
10 : USD 29.623
25 : USD 29.612
100 : USD 25.894

Specifications

Manufacturer

IXYS IXYS

Product Category

MOSFETs MOSFETs

RoHS - XON

y y

Id - Continuous Drain Current

100 A 100 A

Vds - Drain-Source Breakdown Voltage

500 V 500 V

Rds On - Drain-Source Resistance

49 mOhms 49 mOhms

Transistor Polarity

n - channel n - channel

Vgs th - Gate-Source Threshold Voltage

5 V 5 V

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 150 C + 150 C

Pd - Power Dissipation

1.25 kW 1.25 kW

Mounting Style

through hole through hole

Package / Case

PLUS - 264 - 3 PLUS - 264 - 3

Packaging

Tube Tube

Technology

si si

Number of Channels

1 channel 1 channel

Vgs - Gate-Source Voltage

30 V 30 V

Qg - Gate Charge

240 nC 240 nC

Channel Mode

enhancement enhancement

Tradename

polarhv, hiperfet polarhv, hiperfet

Configuration

single single

Height

26.59 mm 26.59 mm

Length

20.29 mm 20.29 mm

Series

ixfb100n50 ixfb100n50

Transistor Type

1 n - channel 1 n - channel

Type

polarhv hiperfet power mosfet polarhv hiperfet power mosfet

Width

5.31 mm 5.31 mm

Brand

Ixys Ixys

Forward Transconductance - Min

50 s 50 s

Cnhts

8541210000 8541210000

Fall Time

26 ns 26 ns

Hts Code

8541290095 8541290095

Mxhts

85412999 85412999

Product Type

mosfet mosfet

Rise Time

29 ns 29 ns

Factory Pack Quantity :

25 25

Subcategory

Mosfets Mosfets

Taric

8541290000 8541290000

Typical Turn-Off Delay Time

110 ns 110 ns

Typical Turn-On Delay Time

36 ns 36 ns

Notes:- Show Stocked Products With Similar Attributes.

IXFB100N50P Alternative Parts

We are delighted to provide the IXFB100N50P from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXFB100N50P and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The IXFB100N50P is a discrete component from IXYS, a semiconductor manufacturer specializing in power semiconductors and integrated circuits. The component is an insulated-gate field effect transistor (IGFET), and is a N-channel 50-amp (100A peak) unit. It is rated for a maximum drain-source voltage of 100 V, and has a maximum drain current of 60A (180A pulsed). It is built using a proprietary advanced trench technology with low gate charge, the IXFB100N50P offers excellent performance, frequency capability, and control of the drain-source on-resistance. It has a gate charge of only 27 nC, a turn-off energy of 510 nJ, high dV/dt immunity, and is housed in a TO-247 package for easy mounting.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

CLR may also be referenced as

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IXYS CORP
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IXYS Integrated Circuits / Clare
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Availability	Price	Buy Price	Quantity
37 Ship by Mon. 07 Jul to Wed. 09 Jul MOQ : 1 Multiples : 1	1 : USD 36.2135 10 : USD 29.623 25 : USD 29.612 100 : USD 25.894

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