The IXFB100N50P is a discrete component from IXYS, a semiconductor manufacturer specializing in power semiconductors and integrated circuits. The component is an insulated-gate field effect transistor (IGFET), and is a N-channel 50-amp (100A peak) unit. It is rated for a maximum drain-source voltage of 100 V, and has a maximum drain current of 60A (180A pulsed). It is built using a proprietary advanced trench technology with low gate charge, the IXFB100N50P offers excellent performance, frequency capability, and control of the drain-source on-resistance. It has a gate charge of only 27 nC, a turn-off energy of 510 nJ, high dV/dt immunity, and is housed in a TO-247 package for easy mounting.