TM TM Polar3 HiPerFET V = 600V IXFB110N60P3 DSS Power MOSFET I = 110A D25 R 56m DS(on) t 250ns rr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TM PLUS264 Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 600 V DSS J G V T = 25 C to 150 C, R = 1M 600 V D DGR J GS S Tab V Continuous 30 V GSS V Transient 40 V GSM G = Gate D = Drain I T = 25 C 110 A D25 C S = Source Tab = Drain I T = 25 C, Pulse Width Limited by T 275 A DM C JM I T = 25 C 55 A A C E T = 25 C3J AS C dv/dt I I , V V , T 150 C 35 V/ns S DM DD DSS J Features P T = 25 C 1890 W D C T -55 ... +150 C J T 150 C Avalanche Rated JM T -55 ... +150 C Low Package Inductance stg Fast Intrinsic Rectifier T Maximum Lead Temperature for Soldering 300 C L Low R and Q T Plastic Body for 10s 260 C DS(on) G SOLD F Mounting Force 30..120/6.7..27 N/lb C Advantages Weight 10 g Easy to Mount Space Savings Applications DC-DC Converters Battery Chargers Symbol Test Conditions Characteristic Values Switch-Mode and Resonant-Mode (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J Power Supplies Uninterrupted Power Supplies BV V = 0V, I = 3mA 600 V DSS GS D AC Motor Drives V V = V , I = 8mA 3.0 5.0 V GS(th) DS GS D High Speed Power Switching I V = 30V, V = 0V 200 nA Applications GSS GS DS I V = V , V = 0V 50 A DSS DS DSS GS T = 125C 2.75 mA J R V = 10V, I = 0.5 I , Note 1 56 m DS(on) GS D DSS 2014 IXYS CORPORATION, All Rights Reserved DS100314B(9/14) IXFB110N60P3 Symbol Test Conditions Characteristic Values TM PLUS264 (IXFB) Outline (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 55A, Note 1 65 105 S fs DS D C 18 nF iss C V = 0V, V = 25V, f = 1MHz 1550 pF oss GS DS C 8 pF rss R Gate Input Resistance 1.2 Gi t 63 ns d(on) Resistive Switching Times t 30 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D DSS t 106 ns d(off) R = 1 (External) G t 15 ns f Q 254 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 80 nC gs GS DS DSS D DSS Q 68 nC gd R 0.066 C/W thJC R 0.13 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 110 A S GS I Repetitive, Pulse Width Limited by T 440 A SM JM V I = 100A, V = 0V, Note 1 1.5 V SD F GS t 250 ns rr I = 55A, -di/dt = 100A/ s F Q 1.6 C RM V = 100V, V = 0V R GS I 14.0 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537