TM X2-Class HiPerFET V = 650V IXFB150N65X2 DSS Power MOSFET I = 150A D25 R 17m DS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TM PLUS264 Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 650 V G DSS J D V T = 25 C to 150 C, R = 1M 650 V DGR J GS S Tab V Continuous 30 V GSS V Transient 40 V GSM G = Gate D = Drain I T = 25 C 150 A D25 C S = Source Tab = Drain I T = 25 C, Pulse Width Limited by T 300 A DM C JM I T = 25 C20A A C E T = 25 C4J AS C P T = 25 C 1560 W D C dv/dt I I , V V , T 150C 50 V/ns S DM DD DSS J Features T -55 ... +150 C J T 150 C JM Low Q G T -55 ... +150 C stg Avalanche Rated Low Package Inductance T Maximum Lead Temperature for Soldering 300 C L T Plastic Body for 10s 260 C SOLD F Mounting Force 30..120 / 6.7..27 N/lb Advantages C Weight 10 g High Power Density Easy to Mount Space Savings Applications Symbol Test Conditions Characteristic Values Switch-Mode and Resonant-Mode (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J Power Supplies DC-DC Converters BV V = 0V, I = 3mA 650 V DSS GS D PFC Circuits V V = V , I = 8mA 3.5 5.0 V AC and DC Motor Drives GS(th) DS GS D Robotics and Servo Controls I V = 30V, V = 0V 200 nA GSS GS DS I V = V , V = 0V 50 A DSS DS DSS GS T = 125C 5 mA J R V = 10V, I = 0.5 I , Note 1 17 m DS(on) GS D D25 2016 IXYS CORPORATION, All Rights Reserved DS100688B(03/16)IXFB150N65X2 Symbol Test Conditions Characteristic Values TM PLUS264 (IXFB) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 60A, Note 1 56 88 S fs DS D R Gate Input Resistance 0.57 Gi C 21.0 nF iss C V = 0V, V = 25V, f = 1MHz 12.5 nF oss GS DS C 42 pF rss Effective Output Capacitance C 600 pF o(er) Energy related V = 0V GS C 2800 pF V = 0.8 V o(tr) Time related DS DSS t 55 ns d(on) Resistive Switching Times t 30 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 100 ns d(off) R = 1 (External) G t 13 ns f Q 355 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 130 nC gs GS DS DSS D D25 Q 110 nC gd R 0.08 C/W thJC R 0.13 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 150 A S GS I Repetitive, Pulse Width Limited by T 600 A SM JM V I = 100A, V = 0V, Note 1 1.4 V SD F GS t 190 ns rr I = 75A, -di/dt = 300A/ s F Q 4.6 C RM V = 100V, V = 0V R GS I 48.4 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537