TM TM Polar HiPerFET IXFB170N30P V = 300V DSS Power MOSFET I = 170A D25 R 18m DS(on) N-Channel Enhancement Mode t 200ns rr Avalanche Rated Fast Intrinsic Diode TM PLUS264 Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 300 V DSS J G V T = 25 C to 150 C, R = 1M 300 V DGR J GS D S V Continuous 20 V GSS Tab V Transient 30 V GSM I T = 25 C 170 A D25 C G = Gate D = Drain I Leads Current Limit, RMS 160 A LRMS S = Source Tab = Drain I T = 25 C, Pulse Width Limited by T 500 A DM C JM I T = 25 C 85 A A C E T = 25 C 5 J AS C dv/dt I I , V V ,T 150 C 20 V/ns S DM DD DSS J Features P T = 25 C 1250 W D C T -55 ... +150 C Fast Intrinsic Diode J T 150 C Avalanche Rated JM T -55 ... +150 C Very Low R Results High Power stg th Dissipation T Maximum Lead Temperature for Soldering 300 C L Low R DS(ON) T Plastic Body for 10s 260 C SOLD Low Package Inductance F Mounting Force 30..120 / 6.7..27 N/lb C Weight 10 g Advantages Low Gate Charge Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness High Power Density Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 3mA 300 V DSS GS D DC-DC Coverters V V = V , I = 8mA 2.5 4.5 V Battery Chargers GS(th) DS GS D Switched-Mode and Resonant-Mode I V = 20V, V = 0V 200 nA GSS GS DS Power Supplies DC Choppers I V = V V = 0V 25A DSS DS DSS, GS AC and DC Motor Control T = 125C 1.5 mA J Uninterrupted Power Supplies High Speed Power Switching R V = 10V, I = 0.5 I , Note 1 18 m DS(on) GS D D25 Applications 2015 IXYS CORPORATION, All Rights Reserved DS100000A(9/15) IXFB170N30P Symbol Test Conditions Characteristic Values TM PLUS264 (IXFB) Outline (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 57 95 S fs DS D C 20 nF iss C V = 0V, V = 25V, f = 1MHz 2450 pF oss GS DS C 27 pF rss t 41 ns d(on) Resistive Switching Times t 29 ns r V = 10V, V = 0.5 V , I =0.5 I GS DS DSS D D25 t 79 ns d(off) R = 1 (External) G t 16 ns f Q 258 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 82 nC gs GS DS DSS D D25 Q 78 nC gd R 0.10 C/W thJC R 0.13 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 170 A S GS I Repetitive, Pulse Width Limited by T 500 A SM JM V I = 85A, V = 0V, Note 1 1.3 V SD F GS t 200 ns rr I = 85A, -di/dt = 150A/ s F Q 1.85 C RM V = 100V R I 21 A RM Note 1: Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537