TM TM Polar HiPerFET V = 100V IXFB300N10P DSS Power MOSFET I = 300A D25 R 5.5m DS(on) N-Channel Enhancement Mode t 200ns rr Avalanche Rated Fast Intrinsic Diode TM PLUS264 Symbol Test Conditions Maximum Ratings V T = 25 C to 175 C 100 V DSS J V T = 25 C to 175 C, R = 1M 100 V G DGR J GS D S V Continuous 20 V GSS Tab V Transient 30 V GSM G = Gate D = Drain I T = 25 C 300 A D25 C S = Source Tab = Drain I Leads Current Limit, RMS 160 A LRMS I T = 25 C, Pulse Width Limited by T 900 A DM C JM I T = 25 C 100 A A C E T = 25 C 3 J AS C dv/dt I I , V V ,T 175 C 20 V/ns S DM DD DSS J Features P T = 25 C 1500 W D C T -55 ... +175 C Low R and Q J DS(on) G T 175 C Avalanche Rated JM T -55 ... +175 C Low Package Inductance stg Fast Intrinsic Diode T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Advantages F Mounting Force 30..120/6.7..27 N/lb C High Power Density Weight 10 g Easy to Mount Space Savings Applications DC-DC Coverters Battery Chargers Switch-Mode and Resonant-Mode Symbol Test Conditions Characteristic Values Power Supplies (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J DC Choppers AC and DC Motor Drives BV V = 0V, I = 3mA 100 V DSS GS D Uninterrupted Power Supplies V V = V , I = 8mA 2.5 5.0 V High Speed Power Switching GS(th) DS GS D Applications I V = 20V, V = 0V 200 nA GSS GS DS I V = V , V = 0V 25A DSS DS DSS GS T = 150C 1.5 mA J R V = 10V, I = 50A, Note 1 5.5 m DS(on) GS D 2014 IXYS CORPORATION, All Rights Reserved DS100015A(02/14) IXFB300N10P Symbol Test Conditions Characteristic Values TM PLUS264 (IXFB) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 55 92 S fs DS D C 23 nF iss C V = 0V, V = 25V, f = 1MHz 6100 pF oss GS DS C 417 pF rss t 36 ns d(on) Resistive Switching Times t 35 ns r V = 10V, V = 0.5 V , I = 100A GS DS DSS D t 56 ns R = 1 (External) d(off) G t 25 ns f Q 279 nC 1 - Gate g(on) 2,4 - Drain Q V = 10V, V = 0.5 V , I = 0.5 I 84 nC gs GS DS DSS D D25 3 - Source Q 107 nC gd R 0.10 C/W thJC R 0.13 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 300 A S GS I Repetitive, Pulse Width Limited by T 1000 A SM JM V I = 100A, V = 0V, Note 1 1.3 V SD F GS t 200 ns I = 150A, -di/dt = 100A/ s rr F Q 0.71 C RM V = 50V R I 10 A RM Note 1: Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537