TM V = 1000V IXFB44N100P Polar Power MOSFET DSS I = 44A TM HiPerFET D25 R 220m DS(on) N-Channel Enhancement Mode t 300ns rr Avalanche Rated Fast Intrinsic Diode TM PLUS264 (IXFB) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1000 V DSS J V T = 25C to 150C, R = 1M 1000 V DGR J GS V Continuous 30 V GSS (TAB) G V Transient 40 V GSM D S I T = 25C44A D25 C I T = 25C, pulse width limited by T 110 A DM C JM G = Gate D = Drain I T = 25C22A AR C S = Source TAB = Drain E T = 25C2J AS C dV/dt I I , V V ,T 150C 15 V/ns S DM DD DSS J Features P T = 25C 1250 W D C z Fast recovery diode T -55 ... +150 C J z Unclamped Inductive Switching (UIS) T 150 C rated JM z Low package inductance T -55 ... +150 C stg - easy to drive and to protect T 1.6mm (0.062 in.) from case for 10s 300 C L T Plastic body for 10s 260 C SOLD Advantages F Mounting torque 30..120/6.7..27 N/lb. C z TM Plus 264 package for clip or spring Weight 10 g mounting z Space savings z High power density Applications Symbol Test Conditions Characteristic Values z Switched-mode and resonant-mode (T = 25C, unless otherwise specified) Min. Typ. Max. J power supplies z DC-DC Converters BV V = 0V, I = 3mA 1000 V DSS GS D z Laser Drivers z V V = V , I = 1mA 3.5 6.5 V AC and DC motor controls GS(th) DS GS D z Robotics and servo controls I V = 30V, V = 0V 200 nA GSS GS DS I V = V 50 A DSS DS DSS V = 0V T = 125C 3 mA GS J R V = 10V, I = 0.5 I Note 1 220 m DS(on) GS D D25, 2008 IXYS CORPORATION, All rights reserved DS99867A(04/08) IXFB44N100P Symbol Test Conditions Characteristic Values TM PLUS264 (IXFB) Outline (T = 25C unless otherwise specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 20 35 S fs DS D D25 C 19 nF iss C V = 0V, V = 25V, f = 1MHz 1060 pF oss GS DS C 41 pF rss R Gate input resistance 1.70 Gi t Resistive Switching Times 60 ns d(on) t V = 10V, V = 0.5 V , I = 0.5 I 68 ns r GS DS DSS D D25 t R = 1 (External) 90 ns d(off) G t 56 ns f Q 305 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 104 nC gs GS DS DSS D D25 Q 126 nC gd R 0.10 C/W thJC R 0.13 C/W thCS Source-Drain Diode Characteristic Values T = 25C unless otherwise specified) Min. Typ. Max. J I V = 0V 44 A S GS I Repetitive, pulse width limited by T 176 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 300 ns rr I = 22A, -di/dt = 100A/s F Q 2.5 C RM V = 100V R I 17 A RM Note 1: Pulse test, t 300s duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537