TM IXFB 60N80P V = 800 V PolarHV HiPerFET DSS I =60 A D25 Power MOSFET R 140 m DS(on) N-Channel Enhancement Mode t 250 ns rr Avalanche Rated Fast Intrinsic Diode TM Symbol Test Conditions Maximum Ratings PLUS264 (IXFB) V T = 25 C to 150 C 800 V DSS J V T = 25 C to 150 C R = 1 M 800 V DGR J GS V Continuous 30 V GSS (TAB) G V Transient 40 V GSM D S I T = 25C60A D25 C I T = 25 C, pulse width limited by T 150 A DM C JM G = Gate D = Drain I T = 25C30A S = Source TAB = Drain AR C E T = 25 C 100 mJ AR C E T = 25C5J AS C Features dv/dt I I , di/dt 100 A/s, V V , 20 V/ns S DM DD DSS T 150C, R = 2 l J G International standard packages l Fast recovery diode P T = 25 C 1250 W D C l Unclamped Inductive Switching (UIS) T -55 ... +150 C J rated T 150 C l JM Low package inductance T -55 ... +150 C stg - easy to drive and to protect T 1.6 mm (0.062 in.) from case for 10 s 300 C L T Plastic body for 10 s 260 C SOLD Advantages F Mounting force 30..120/7.5...2.7 N/lb C l TM Plus 264 package for clip or spring Weight 10 g l Space savings l High power density Symbol Test Conditions Characteristic Values (T = 25 C, unless otherwise specified) Min. Typ. Max. J BV V = 0 V, I = 3 mA 800 V DSS GS D V V = V , I = 8 mA 3.0 5.0 V GS(th) DS GS D I V = 30 V , V = 0 200 nA GSS GS DC DS I V = V 25 A DSS DS DSS V = 0 V T = 125 C 3000 A GS J R V = 10 V, I = 0.5 I , Note 1 140 m DS(on) GS D D25 DS99560E(02/06) 2006 IXYS All rights reserved IXFB 60N80P Symbol Test Conditions Characteristic Values TM PLUS264 (IXFB) Outline (T = 25 C, unless otherwise specified) J Min. Typ. Max. g V = 20 V I = 0.5 I , Note 1 35 67 S fs DS D D25 C 18 nF iss C V = 0 V, V = 25 V, f = 1 MHz 1200 pF oss GS DS C 44 pF rss t 36 ns d(on) t V = 10 V, V = 0.5 V , I =0.5 I 29 ns r GS DS DSS D D25 t R = 1 (External) 110 ns d(off) G t 26 ns f Q 250 nC g(on) Q V = 10 V, V = 0.5 V , I = 0.5 I 90 nC gs GS DS DSS D D25 Q 78 nC gd R 0.10 C/W thJC R 0.13 C/W thCS Source-Drain Diode Characteristic Values (T = 25 C, unless otherwise specified) J Symbol Test Conditions Min. Typ. Max. I V = 0 V 60 A S GS I Repetitive 150 A SM V I = I , V = 0 V, Note 1 1.5 V SD F S GS t I = 25A, -di/dt = 100 A/s 250 ns rr F Q V = 100V 0.6 C RM R I 6.0 A RM Notes: 1. Pulse test, t 300 s, duty cycle d 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2