TM Polar HiPerFET IXFA10N80P V = 800V DSS IXFP10N80P I = 10A Power MOSFET D25 IXFQ10N80P R 1.1 DS(on) N-Channel Enhancement Mode IXFH10N80P t 250ns rr Avalanche Rated Fast Intrinsic Diode TO-263 (IXFA) TO-220 (IXFP) TO-3P (IXFQ) G G S D G D (Tab) S D S D (Tab) D (Tab) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 800 V TO-247 (IXFH) DSS J V T = 25 C to 150 C, R = 1M 800 V DGR J GS V Continuous 30 V GSS V Transient 40 V GSM G D I T = 25 C10A D (Tab) D25 C S I T = 25 C, Pulse Width Limited by T 30 A DM C JM G = Gate D = Drain I T = 25 C5A A C S = Source Tab = Drain E T = 25 C 600 mJ AS C dV/dt I I , V V , T 150 C 10 V/ns S DM DD DSS J P T = 25 C 300 W D C Features T -55 ... +150 C J T 150 C International Standard Packages JM T -55 ... +150 C Avalanche Rated stg Low Package Inductance T Maximum Lead Temperature for Soldering 300 C L Easy to Drive and to Protect T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Advantages F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb C M Mounting Torque (TO-220, TO-247 & TO-3P) 1.13 / 10 Nm/lb.in d Easy to Mount Weight TO-263 2.5 g Space Savings TO-220 3.0 g High Power Density TO-3P 5.5 g TO-247 6.0 g Applications Symbol Test Conditions Characteristic Values Switched-Mode and Resonant-Mode (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J Power Supplies BV V = 0V, I = 250 A 800 V DC-DC Converters DSS GS D Laser Drivers V V = V , I = 2.5mA 3.0 5.5 V GS(th) DS GS D AC and DC Motor Drives I V = 30V, V = 0V 100 nA Robotics and Servo Controls GSS GS DS I V = V , V = 0V 25 A DSS DS DSS GS T = 150C 500A J R V = 10V, I = 0.5 I , Note 1 1.1 DS(on) GS D D25 2018 IXYS CORPORATION, All Rights Reserved DS99432G(6/18) IXFA10N80P IXFP10N80P IXFQ10N80P IXFH10N80P Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 20V, I = 0.5 I , Note 1 7 11 S fs DS D D25 C 2050 pF iss C V = 0V, V = 25V, f = 1MHz 172 pF oss GS DS C 16 pF rss t 21 ns d(on) Resistive Switching Times t 22 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 62 ns d(off) R = 5 (External) G t 22 ns f Q 40 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 12 nC gs GS DS DSS D D25 Q 14 nC gd R 0.42 C/W thJC R (TO-220) 0.50 C/W thCS R (TO-247 & TO-3P) 0.25 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 10 A S GS I Repetitive, Pulse WidthLlimited by T 30 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 200 250 ns I = 10A, V = 0V rr F GS I 3.0 A -di/dt = 100A/ s RM V = 100V R Q 0.6 C RM Note 1. Pulse test, t 300 s, duty cycle d 2 % IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537