X-On Electronics has gained recognition as a prominent supplier of IXFH110N10P MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXFH110N10P MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IXFH110N10P IXYS

IXFH110N10P electronic component of IXYS
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See Product Specifications
Part No.IXFH110N10P
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET 110 Amps 100V 0.015 Rds
Datasheet: IXFH110N10P Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 8.96 ea
Line Total: USD 8.96 
Availability - 291
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1

 IXFH110N10P More Buying Options & Price Grid(s)

Availability Price Quantity
291
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 8.96
3 : USD 6.37
8 : USD 6.02
510 : USD 5.796

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Height
Length
Series
Transistor Type
Type
Width
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IXFH110N10P from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXFH110N10P and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

IXFH110N10P is an IXYS-made Insulated Gate Bipolar Transistor (IGBT) of the discrete type. It features a 10A collector current rating (tC=25°C) and a maximum collector-emitter voltage of 1100V. It also has a gate source-voltage range of -20V to +20V and a gate emitter voltage of 5.3V. The transistor has an optimized ignition and density characteristics, and is suitable for use in a wide variety of applications, including motor control, converter, and inverter systems.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

CLR may also be referenced as

IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR
Littelfuse/IXYS

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