TM IXFH 120N15P V = 150 V PolarHT HiPerFET DSS IXFT 120N15P I = 120 A D25 Power MOSFET R 16 m DS(on) t 200 ns N-Channel Enhancement Mode rr Avalanche Energy Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-247 (IXFH) V T = 25 C to 175 C 150 V DSS J V T = 25 C to 175 C R = 1 M 150 V DGR J GS V Continuous 20 V DSS D (TAB) V Transient 30 V GSM G D S I T = 25 C 120 A D25 C I External lead current limit 75 A L(RMS) I T = 25 C, pulse width limited by T 260 A DM C JM TO-268 (IXFT) I T = 25C60A AR C E T = 25C60mJ AR C E T = 25 C 2.0 J AS C G S dv/dt I I , di/dt 100 A/s, V V , 10 V/ns S DM DD DSS D (TAB) T 150C, R = 4 J G P T = 25 C 600 W D C G = Gate D = Drain S = Source TAB = Drain T -55 ... +175 C J T 175 C JM T -55 ... +150 C stg T 1.6 mm (0.062 in.) from case for 10 s 300 C L T Plastic case for 10 s 260 C Features SOLD M Mounting torque (TO-3P) 1.13/10 Nm/lb.in. l d International standard packages l Unclamped Inductive Switching (UIS) Weight TO-247 6.0 g TO-268 5.0 g rated l Low package inductance - easy to drive and to protect Symbol Test Conditions Characteristic Values (T = 25 C, unless otherwise specified) Min. Typ. Max. Advantages J BV V = 0 V, I = 250 A 150 V DSS GS D l Easy to mount l Space savings V V = V , I = 4 mA 3.0 5.0 V GS(th) DS GS D l High power density I V = 20 V , V = 0 100 nA GSS GS DC DS I V = V 25 A DSS DS DSS V = 0 V T = 175 C 500 A GS J R V = 10 V, I = 0.5 I 16 m DS(on) GS D D25 Pulse test, t 300 s, duty cycle d 2 % DS99210E(12/05) 2006 IXYS All rights reserved IXFH 120N15P IXFT 120N15P Symbol Test Conditions Characteristic Values TO-247 (IXFH) Outline (T = 25 C, unless otherwise specified) J Min. Typ. Max. g V = 10 V I = 0.5 I , pulse test 40 60 S fs DS D D25 C 4900 pF iss C V = 0 V, V = 25 V, f = 1 MHz 1300 pF oss GS DS C 330 pF rss t 33 ns d(on) t V = 10 V, V = 0.5 V , I = 60 A 42 ns r GS DS DSS D Terminals: 1 - Gate 2 - Drain t R = 4 (External) 85 ns d(off) G 3 - Source Tab - Drain Dim. Millimeter Inches t 26 ns f Min. Max. Min. Max. A 4.7 5.3 .185 .209 Q 150 nC g(on) A 2.2 2.54 .087 .102 1 Q V = 10 V, V = 0.5 V , I = 0.5 I 40 nC A 2.2 2.6 .059 .098 gs GS DS DSS D D25 2 b 1.0 1.4 .040 .055 Q 80 nC gd b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 R 0.25 C/W thJC C .4 .8 .016 .031 D 20.80 21.46 .819 .845 R (TO-3P) 0.21 C/W thCS E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Source-Drain Diode Characteristic Values Q 5.89 6.40 0.232 0.252 (T = 25 C, unless otherwise specified) J R 4.32 5.49 .170 .216 Symbol Test Conditions Min. Typ. Max. S 6.15 BSC 242 BSC I V = 0 V 120 A S GS TO-268 (IXFT) Outline I Repetitive 260 A SM V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t I = 25 A, -di/dt = 100 A/s 200 ns rr F Q V = 100 V, V = 0 V 600 nC RM R GS I 6 RM Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2