TM TM Polar HiPerFET V = 200V IXFH120N20P DSS Power MOSFET I = 120A IXFK120N20P D25 R 22m DS(on) t 200ns rr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings V T = 25C to 175C 200 V DSS J V T = 25C to 175C, R = 1M 200 V DGR J GS G D V Continuous 20 V Tab S GSS V Transient 30 V GSM TO-264 (IXFK) I T = 25C 120 A D25 C I Lead Current Limit, RMS 75 A LRMS I T = 25C, Pulse Width Limited by T 300 A DM C JM I T = 25C60A A C G E T = 25C2J AS C D S P T = 25C 714 W D C Tab dV/dt I I , V V , T 175C 10 V/ns S DM DD DSS J G = Gate D = Drain T -55 ... +175 C S = Source Tab = Drain J T 175 C JM T -55 ... +175 C stg Features T 1.6mm (0.062 in.) from Case for 10s 300 C L z International Standard Packages T Plastic Body for 10s 260 C SOLD z Avalanche Rated M Mounting Torque 1.13/10 Nm/lb.in. d z Fast Intrinsic Diode z Weight TO-247 6 g Low Q G TO-264 10 g z Low R DS(on) z Low Drain-to-Tab Capacitance z Low Package Inductance Advantages Symbol Test Conditions Characteristic Values z Easy to Mount (T = 25C Unless Otherwise Specified) Min. Typ. Max. J z Space Savings BV V = 0V, I = 250A 200 V DSS GS D Applications V V = V , I = 4mA 2.5 5.0 V GS(th) DS GS D z DC-DC Coverters I V = 20V, V = 0V 200 nA GSS GS DS z Battery Chargers z Switch-Mode and Resonant-Mode I V = V , V = 0V 25 A DSS DS DSS GS Power Supplies T = 150C 500 A J z DC Choppers R V = 10V, I = 0.5 I , Note 1 22 m z DS(on) GS D D25 AC and DC Motor Drives z Uninterrupted Power Supplies z High Speed Power Switching Applications 20109 IXYS CORPORATION, All Rights Reserved DS99223F(02/10)IXFH120N20P IXFK120N20P Symbol Test Conditions Characteristic Values TO-247 (IXFH) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 0.5 I , Note 1 40 63 S fs DS D D25 C 6000 pF iss P C V = 0V, V = 25V, f = 1MHz 1300 pF 1 2 3 oss GS DS C 265 pF rss t 30 ns d(on) Resistive Switching Times t 35 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 100 ns d(off) R = 3.3 (External) G e t 31 ns f Terminals: 1 - Gate 2 - Drain 3 - Source Q 152 nC g(on) Dim. Millimeter Inches Q V = 10V, V = 0.5 V , I = 0.5 I 40 nC gs GS DS DSS D D25 Min. Max. Min. Max. Q 75 nC A 4.7 5.3 .185 .209 gd A 2.2 2.54 .087 .102 1 R 0.21 C/W A 2.2 2.6 .059 .098 thJC 2 b 1.0 1.4 .040 .055 R TO-247 0.21 C/W thCS b 1.65 2.13 .065 .084 1 TO-264 0.15 C/W b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 Source-Drain Diode P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 Symbol Test Conditions Characteristic Values R 4.32 5.49 .170 .216 (T = 25C, Unless Otherwise Specified) Min. Typ. Max. S 6.15 BSC 242 BSC J TO-264 (IXFK) Outline I V = 0V 120 A S GS I Repetitive, Pulse Width Limited by T 300 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 100 200 ns rr I = 25A, -di/dt = 100A/s F Q 0.4 C RM V = 100V, V = 0V R GS I 6.0 A RM 1 - Gate 2 - Drain 3 - Source 4 - Drain Note 1. Pulse test, t 300s, duty cycle, d 2%. Millimeter Inches Dim. Min. Max. Min. Max. A 4.82 5.13 .190 .202 A1 2.54 2.89 .100 .114 A2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 D 25.91 26.16 1.020 1.030 E 19.81 19.96 .780 .786 e 5.46 BSC .215 BSC J 0.00 0.25 .000 .010 K 0.00 0.25 .000 .010 L 20.32 20.83 .800 .820 L1 2.29 2.59 .090 .102 P 3.17 3.66 .125 .144 Q 6.07 6.27 .239 .247 Q1 8.38 8.69 .330 .342 R 3.81 4.32 .150 .170 R1 1.78 2.29 .070 .090 S 6.04 6.30 .238 .248 T 1.57 1.83 .062 .072 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537