TM IXFH12N120P V = 1200V Polar Power MOSFET DSS IXFV12N120P I = 12A TM HiPerFET D25 R 1.35 IXFV12N120PS DS(on) N-Channel Enhancement Mode t 300ns rr Avalanche Rated Fast Intrinsic Diode PLUS220 (IXFV) G D S Symbol Test Conditions Maximum Ratings D (TAB) V T = 25C to 150C 1200 V DSS J PLUS220SMD (IXFV S) V T = 25C to 150C, R = 1M 1200 V DGR J GS V Continuous 30 V GSS V Transient 40 V GSM G S I T = 25C12A D (TAB) D25 C I T = 25C, pulse width limited by T 30 A DM C JM TO-247 (IXFH) I T = 25C6A A C E T = 25C 500 mJ AS C dV/dt I I , V V ,T 150C 15 V/ns S DM DD DSS J D (TAB) P T = 25C 543 W D C T -55 ... +150 C J G = Gate D = Drain T 150 C S = Source TAB = Drain JM T -55 ... +150 C Features stg z T Maximum lead temperature for soldering 300 C International standard packages L z Fast recovery diode T Plastic body for 10s 260 C SOLD z Unclamped Inductive Switching (UIS) M Mounting torque (TO-247) 1.13/10 Nm/lb.in. rated d z Low package inductance F Mounting force (PLUS 220) 11..65 / 2.5..14.6 N/lb. C - easy to drive and to protect Weight TO-247 6 g Advantages PLUS 220 types 4 g z Easy to mount z Space savings z High power density Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) Min. Typ. Max. J Applications: BV V = 0V, I = 1mA 1200 V DSS GS D z High Voltage Switched-mode and V V = V , I = 1mA 3.5 6.5 V GS(th) DS GS D resonant-mode power supplies z High Voltage Pulse Power Applications I V = 30V, V = 0V 100 nA GSS GS DS z High Voltage Discharge circuits in I V = V 25 A Lasers Pulsers, Spark Igniters, RF DSS DS DSS Generators V = 0V T = 125C 2 mA GS J z High Voltage DC-DC converters R V = 10V, I = 0.5 I , Note 1 1.15 1.35 z DS(on) GS D D25 High Voltage DC-AC inverters 2008 IXYS CORPORATION, All rights reserved DS99894A (04/08) IXFH12N120P IXFV12N120P IXFV12N120PS Symbol Test Conditions Characteristic Values PLUS220 (IXFV) Outline (T = 25C unless otherwise specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 5 9 S fs DS D D25 C 5400 pF iss C V = 0V, V = 25V, f = 1MHz 290 pF oss GS DS C 40 pF rss R Gate input resistance 1.5 Gi t 34 ns d(on) Resistive Switching Times t 25 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 62 ns d(off) R = 2 (External) t G 34 ns f Q 103 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 29 nC gs GS DS DSS D D25 Q 41 nC gd R 0.23 C/W thJC R (TO-247, PLUS 220) 0.21 C/W thCS Source-Drain Diode Characteristic Values T = 25C unless otherwise specified) Min. Typ. Max. J I V = 0V 12 A S GS I Repetitive, pulse width limited by T 48 A SM JM TO-247 (IXFH) Outline V I = I , V = 0V, Note 1 1.5 V SD F S GS t 300 ns rr I = 6A, -di/dt = 100A/s F Q 0.5 C RM V = 100V, V = 0V R GS I 6 A RM P Note 1: Pulse test, t 300s duty cycle, d 2%. PLUS220SMD (IXFV S) Outline e Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537