X-On Electronics has gained recognition as a prominent supplier of IXFH12N120P MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXFH12N120P MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IXFH12N120P IXYS

IXFH12N120P electronic component of IXYS
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Part No.IXFH12N120P
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET 12 Amps 1200V 1.15 Rds
Datasheet: IXFH12N120P Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 17.374 ea
Line Total: USD 17.37 
Availability - 257
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
257
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 17.374
3 : USD 16.436
30 : USD 16.324

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Height
Length
Series
Transistor Type
Type
Width
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the IXFH12N120P from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXFH12N120P and other electronic components in the MOSFETs category and beyond.

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TM IXFH12N120P V = 1200V Polar Power MOSFET DSS IXFV12N120P I = 12A TM HiPerFET D25 R 1.35 IXFV12N120PS DS(on) N-Channel Enhancement Mode t 300ns rr Avalanche Rated Fast Intrinsic Diode PLUS220 (IXFV) G D S Symbol Test Conditions Maximum Ratings D (TAB) V T = 25C to 150C 1200 V DSS J PLUS220SMD (IXFV S) V T = 25C to 150C, R = 1M 1200 V DGR J GS V Continuous 30 V GSS V Transient 40 V GSM G S I T = 25C12A D (TAB) D25 C I T = 25C, pulse width limited by T 30 A DM C JM TO-247 (IXFH) I T = 25C6A A C E T = 25C 500 mJ AS C dV/dt I I , V V ,T 150C 15 V/ns S DM DD DSS J D (TAB) P T = 25C 543 W D C T -55 ... +150 C J G = Gate D = Drain T 150 C S = Source TAB = Drain JM T -55 ... +150 C Features stg z T Maximum lead temperature for soldering 300 C International standard packages L z Fast recovery diode T Plastic body for 10s 260 C SOLD z Unclamped Inductive Switching (UIS) M Mounting torque (TO-247) 1.13/10 Nm/lb.in. rated d z Low package inductance F Mounting force (PLUS 220) 11..65 / 2.5..14.6 N/lb. C - easy to drive and to protect Weight TO-247 6 g Advantages PLUS 220 types 4 g z Easy to mount z Space savings z High power density Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) Min. Typ. Max. J Applications: BV V = 0V, I = 1mA 1200 V DSS GS D z High Voltage Switched-mode and V V = V , I = 1mA 3.5 6.5 V GS(th) DS GS D resonant-mode power supplies z High Voltage Pulse Power Applications I V = 30V, V = 0V 100 nA GSS GS DS z High Voltage Discharge circuits in I V = V 25 A Lasers Pulsers, Spark Igniters, RF DSS DS DSS Generators V = 0V T = 125C 2 mA GS J z High Voltage DC-DC converters R V = 10V, I = 0.5 I , Note 1 1.15 1.35 z DS(on) GS D D25 High Voltage DC-AC inverters 2008 IXYS CORPORATION, All rights reserved DS99894A (04/08) IXFH12N120P IXFV12N120P IXFV12N120PS Symbol Test Conditions Characteristic Values PLUS220 (IXFV) Outline (T = 25C unless otherwise specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 5 9 S fs DS D D25 C 5400 pF iss C V = 0V, V = 25V, f = 1MHz 290 pF oss GS DS C 40 pF rss R Gate input resistance 1.5 Gi t 34 ns d(on) Resistive Switching Times t 25 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 62 ns d(off) R = 2 (External) t G 34 ns f Q 103 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 29 nC gs GS DS DSS D D25 Q 41 nC gd R 0.23 C/W thJC R (TO-247, PLUS 220) 0.21 C/W thCS Source-Drain Diode Characteristic Values T = 25C unless otherwise specified) Min. Typ. Max. J I V = 0V 12 A S GS I Repetitive, pulse width limited by T 48 A SM JM TO-247 (IXFH) Outline V I = I , V = 0V, Note 1 1.5 V SD F S GS t 300 ns rr I = 6A, -di/dt = 100A/s F Q 0.5 C RM V = 100V, V = 0V R GS I 6 A RM P Note 1: Pulse test, t 300s duty cycle, d 2%. PLUS220SMD (IXFV S) Outline e Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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