TM V I R HiPerFET DSS D25 DS(on) IXFH/IXFM 10 N90 900 V 10 A 1.1 Power MOSFETs IXFH/IXFM 12 N90 900 V 12 A 0.9 IXFH/IXFT 13 N90 900 V 13 A 0.8 N-Channel Enhancement Mode TM High dv/dt, Low t , HDMOS Family t 250 ns rr rr TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 900 V DSS J V T = 25C to 150C R = 1 M 900 V DGR J GS V Continuous 20 V GS (TAB) V Transient 30 V GSM TO-204 AA (IXFM) I T = 25C 10N90 10 A D25 C 12N90 12 A 13N90 13 A I T = 25C, 10N90 40 A DM C pulse width limited by T 12N90 48 A JM 13N90 52 A G D I T = 25C 10N90 10 A AR C 12N90 12 A TO-268 (IXFT) 13N90 13 A E T = 25C30mJ AR C dv/dt I I , di/dt 100 A/ s, V V , 5 V/ns G S DM DD DSS E C (TAB) T 150C, R = 2 J G P T = 25C 300 W D C G = Gate, D = Drain, T -55 ... +150 C S = Source, TAB = Drain J T 150 C JM Features T -55 ... +150 C stg z International standard packages T 1.6 mm (0.062 in.) from case for 10 s 300 C z TM L Low R HDMOS process DS (on) z Rugged polysilicon gate cell structure M Mounting torque 1.13/10 Nm/lb.in. d z Unclamped Inductive Switching (UIS) Weight TO-204 = 18 g, TO-247 = 6 g rated z Low package inductance - easy to drive and to protect Symbol Test Conditions Characteristic Values z Fast intrinsic Rectifier (T = 25C, unless otherwise specified) J Applications min. typ. max. z DC-DC converters z Synchronous rectification V V = 0 V, I = 3 mA 900 V z DSS GS D Battery chargers V V = V , I = 4 mA 2.0 4.5 V z GS(th) DS GS D Switched-mode and resonant-mode power supplies I V = 20 V , V = 0 100 nA GSS GS DC DS z DC choppers z AC motor control I V = V T =25C25 A DSS DS DSS J z Temperature and lighting controls V = 0 V T = 125C1mA GS J z Low voltage relays Advantages R V = 10 V, I = 0.5 I 10N90 1.1 DS(on) GS D D25 z Easy to mount with 1 screw (TO-247) 12N90 0.9 (isolated mounting screw hole) 13N90 0.8 z Space savings Pulse test, t 300 s, duty cycle d 2 % z High power density DS91530I(01/03) 2003 IXYS All rights reservedIXFH 10N90 IXFH 12N90 IXFH 13N90 IXFM 10N90 IXFM 12N90 IXFT 13N90 TO-247 AD (IXFH) Outline Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) J min. typ. max. g V = 10 V I = 0.5 I , pulse test 6 12 S fs DS D D25 1 2 3 C 4200 pF iss C V = 0 V, V = 25 V, f = 1 MHz 315 pF oss GS DS C 90 pF rss t 18 50 ns d(on) t V = 10 V, V = 0.5 V , I = 0.5 I 12 50 ns Terminals: 1 - Gate 2 - Drain r GS DS DSS D D25 3 - Source Tab - Drain t R = 2 (External) 51 100 ns d(off) G Dim. Millimeter Inches t 18 50 ns Min. Max. Min. Max. f A 4.7 5.3 .185 .209 Q 123 155 nC A 2.2 2.54 .087 .102 g(on) 1 A 2.2 2.6 .059 .098 2 Q V = 10 V, V = 0.5 V , I = 0.5 I 27 45 nC gs GS DS DSS D D25 b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 Q 49 80 nC 1 gd b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 R 0.42 K/W thJC D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 R (IXFH/IXFM) 0.25 K/W thCK e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Source-Drain Diode Characteristic Values Q 5.89 6.40 0.232 0.252 (T = 25C, unless otherwise specified) R 4.32 5.49 .170 .216 J Symbol Test Conditions min. typ. max. S 6.15 BSC 242 BSC I V = 0 V 10N90 10 A S GS 12N90 12 A TO-204 AA (IXFM) Outline 13N90 13 A I Repetitive 10N90 40 A SM pulse width limited by T 12N90 48 A JM 13N90 52 A V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t T =25C 250 ns rr I = I J F S T = 125C 400 ns -di/dt = 100 A/ s, J V = 100 V R Q T =25C1 C Pins 1 - Gate 2 - Source RM J Case - Drain T = 125C2 C J Dim. Millimeter Inches I T =25C10 A Min. Max. Min. Max. RM J T = 125C15 A A 6.4 11.4 .250 .450 J A1 3.42 .135 TO-268 (IXFT) Outline b .97 1.09 .038 .043 D 22.22 .875 e 10.67 11.17 .420 .440 e1 5.21 5.71 .205 .225 L 7.93 .312 p 3.84 4.19 .151 .165 p1 3.84 4.19 .151 .165 q 30.15 BSC 1.187 BSC R 13.33 .525 R1 4.77 .188 s 16.64 17.14 .655 .675 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025