TM IXFH 14N80P V = 800 V PolarHV HiPerFET DSS IXFQ 14N80P I = 14 A Power MOSFET D25 IXFT 14N80P R 720 m DS(on) N-Channel Enhancement Mode IXFV 14N80P t 250 ms Avalanche Rated rr Fast Intrinsic Diode IXFV 14N80PS TO-247 (IXFH) Symbol Test Conditions Maximum Ratings D (TAB) V T = 25C to 175C 800 V DSS J V T = 25C to 175C R = 1 M 800 V TO-3P (IXFQ) DGR J GS V Continuous 30 V GS V Transient 40 V GSM G I T = 25C14A D25 C (TAB) D I T = 25C, pulse width limited by T 40 A DM C JM S I T = 25C7A AR C E T = 25C30mJ TO-268 (IXFT) AR C E T = 25C 500 mJ AS C G dv/dt I I , di/dt 100 A/s, V V , 10 V/ns S DM DD DSS S T 150C, R = 5 J G D (TAB) P T = 25C 400 W D C PLUS220 (IXFV) T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg D (TAB) G D T 1.6 mm (0.062 in.) from case for 10 s 300 C L S T Plastic body for 10 s 260 C SOLD PLUS220SMD (IXFV...S) M Mounting torque (TO-247, TO-3P) 1.13/10 Nm/lb.in. d Weight PLUS220, PLUS220 SMD 2 g TO-268, TO-3P 5.5 g TO-247 6 g G S D (TAB) G = Gate D = Drain S = Source TAB = Drain Symbol Test Conditions Characteristic Values Features (T = 25C, unless otherwise specified) Min. Typ. Max. J z BV V = 0 V, I = 250A 800 V International standard packages DSS GS D z Unclamped Inductive Switching (UIS) V V = V , I = 4 mA 3.0 5.5 V GS(th) DS GS D rated z Low package inductance I V = 30 V, V = 0 V 100 nA GSS GS DS - easy to drive and to protect I V = V 25 A DSS DS DSS Advantages V = 0 V T = 125C1mA GS J z R V = 10 V, I = 0.5 I 720 m Easy to mount DS(on) GS D D25 z Pulse test, t 300 s, duty cycle d 2 % Space savings z High power density DS99593E(07/06) 2006 IXYS All rights reservedIXFH 14N80P IXFQ 14N80P IXFT 14N80P IXFV 14N80P IXFV 14N80PS TO-247 (IXFH) Outline Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) J Min. Typ. Max. g V = 20 V I = 0.5 I , pulse test 8 15 S fs DS D D25 1 2 3 C 3900 pF iss C V = 0 V, V = 25 V, f = 1 MHz 250 pF oss GS DS C 19 pF rss t 26 ns d(on) t V = 10 V, V = 0.5 V , I = I 29 ns r GS DS DSS D D25 Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain t R = 5 (External) 62 ns d(off) G Dim. Millimeter Inches t 27 ns f Min. Max. Min. Max. A 4.7 5.3 .185 .209 Q 61 nC g(on) A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 Q V = 10 V, V = 0.5 V , I = 0.5 I 18 nC 2 gs GS DS DSS D D25 b 1.0 1.4 .040 .055 Q 20 nC b 1.65 2.13 .065 .084 gd 1 b 2.87 3.12 .113 .123 2 R 0.31 C/W C .4 .8 .016 .031 thJC D 20.80 21.46 .819 .845 R (TO-247, TO-3P) 0.21 C/W thCS E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 Source-Drain Diode Characteristic Values P 3.55 3.65 .140 .144 (T = 25C, unless otherwise specified) J Q 5.89 6.40 0.232 0.252 Symbol Test Conditions Min. Typ. Max. R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC I V = 0 V 14 A S GS I Repetitive 40 A TO-268 (IXFT) Outline SM V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t I = 25A, 250 ns rr F Q -di/dt = 100 A/s 0.4 C RM I V = 100V 5 A RM R PLUS220SMD (IXFV S) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537