Advance Technical Information TM TM Trench HiperFET V = 200V IXFT150N20T DSS Power MOSFETs I = 150A IXFH150N20T D25 R 15m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-268 (IXFT) Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 200 V DSS J V T = 25C to 150C, R = 1M 200 V TO-247 (IXFH) DGR J GS V Continuous 20 V GSS V Transient 30 V GSM I T = 25C 150 A D25 C G I T = 25C, Pulse Width Limited by T 375 A DM C JM D D (Tab) S I T = 25C 75 A A C E T = 25C 1.5 J AS C G = Gate D = Drain P T = 25C 890 W D C S = Source Tab = Drain dv/dt I I , V V , T 150C 20 V/ns S DM DD DSS J T -55 to +150 C J T +150 C JM Features T -55 to +150 C stg T 1.6mm (0.063in) from Case for 10s 300 C z L International Standard Packages z T Plastic Body for 10s 260 C Avalanche Rated SOLD z High Current Handling Capability M Mounting Torque (TO-247) 1.13/10 Nm/lb.in. d z Fast Intrinsic Rectifier z Weight TO-268 4 g Low R DS(on) TO-247 6 g Advantages z Easy to Mount Symbol Test Conditions Characteristic Values z Space Savings (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J z High Power Density BV V = 0V, I = 1mA 200 V DSS GS D V V = V , I = 4mA 3.0 5.0 V GS(th) DS GS D Applications I V = 20V, V = 0V 200 nA GSS GS DS z I V = V , V = 0V 25 A DC-DC Converters DSS DS DSS GS z Battery Chargers T = 125C 1.5 mA J z Switch-Mode and Resonant-Mode R V = 10V, I = 0.5 I , Note 1 15 m Power Supplies DS(on) GS D D25 z DC Choppers z AC Motor Drives z Uninterruptible Power Supplies z High Speed Power Switching Applications 2011 IXYS CORPORATION, All Rights Reserved DS100426(12/11)IXFT150N20T IXFH150N20T Symbol Test Conditions Characteristic Values TO-268 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 0.5 I , Note 1 66 112 S fs DS D D25 C 11.7 nF iss C V = 0V, V = 25V, f = 1MHz 1250 pF oss GS DS C 162 pF rss t 43 ns d(on) Resistive Switching Times t 12 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 45 ns d(off) R = 2 (External) G Terminals: 1 - Gate 2,4 - Drain t 12 ns f 3 - Source Q 177 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 70 nC gs GS DS DSS D D25 Q 44 nC gd R 0.14 C/W thJC R TO-247 0.21 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 150 A TO-247 Outline S GS I Repetitive, Pulse Width Limited by T 600 A SM JM V I = 100A, V = 0V, Note 1 1.4 V SD F GS t 100 ns rr P I = 75A, -di/dt = 100A/s, F 1 2 3 I 8.0 A RM V = 75V, V = 0V R GS Q 0.4 C RM e Note 1. Pulse test, t 300s, duty cycle, d 2%. Terminals: 1 - Gate 2 - Drain 3 - Source Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 ADVANCE TECHNICAL INFORMATION b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 The product presented herein is under development. The Technical Specifications offered are derived C .4 .8 .016 .031 from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a D 20.80 21.46 .819 .845considered reflectio of the anticipated result. IXYS reserves the right to change limits, test E 15.75 16.26 .610 .640 conditions, and dimensions without notice. e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537