X-On Electronics has gained recognition as a prominent supplier of IXFH15N100Q3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXFH15N100Q3 MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IXFH15N100Q3 IXYS

IXFH15N100Q3 electronic component of IXYS
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Part No.IXFH15N100Q3
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/15A
Datasheet: IXFH15N100Q3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 17.5 ea
Line Total: USD 17.5 
Availability - 268
Ship by Fri. 29 Nov to Tue. 03 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
268
Ship by Fri. 29 Nov to Tue. 03 Dec
MOQ : 1
Multiples : 1
1 : USD 17.5
3 : USD 16.548
10 : USD 16.352
30 : USD 16.002

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Tradename
Configuration
Series
Transistor Type
Brand
Cnhts
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
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We are delighted to provide the IXFH15N100Q3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXFH15N100Q3 and other electronic components in the MOSFETs category and beyond.

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Q3-Class V = 1000V IXFT15N100Q3 DSS TM HiperFET I = 15A IXFH15N100Q3 D25 Power MOSFET R 1.05 DS(on) D t 250ns rr N-Channel Enhancement Mode G Avalanche Rated TO-268 Fast Intrinsic Rectifier (IXFT) S G S D (Tab) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 1000 V DSS J TO-247 V T = 25 C to 150 C, R = 1M 1000 V DGR J GS (IXFH) V Continuous 30 V GSS V Transient 40 V GSM I T = 25 C 15 A D25 C G I T = 25 C, Pulse Width Limited by T 45 A DM C JM D D (Tab) S I T = 25 C 7.5 A A C E T = 25 C 1.0 J AS C G = Gate D = Drain S = Source Tab = Drain dv/dt I I , V V , T 150C 50 V/ns S DM DD DSS J P T = 25 C 690 W D C T -55 ... +150 C J T 150 C Features JM T -55 ... +150 C stg Low Intrinsic Gate Resistance T Maximum Lead Temperature for Soldering 300 C L International Standard Packages T 1.6 mm (0.062in.) from Case for 10s 260 C Low Package Inductance SOLD Fast Intrinsic Rectifier M Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in. d Low R and Q DS(on) G Weight TO-268 4.0 g TO-247 6.0 g Advantages High Power Density Easy to Mount Space Savings Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 1mA 1000 V DSS GS D Applications V V = V , I = 4mA 3.5 6.5 V GS(th) DS GS D DC-DC Converters I V = 30V, V = 0V 100 nA Battery Chargers GSS GS DS Switch-Mode and Resonant-Mode I V = V , V = 0V 25 A DSS DS DSS GS Power Supplies T = 125 C 1.5 mA J DC Choppers Temperature and Lighting Controls R V = 10V, I = 0.5 I , Note 1 1.05 DS(on) GS D D25 DS100353A(1/20) 2020 IXYS CORPORATION, All Rights Reserved IXFT15N100Q3 IXFH15N100Q3 Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 7.5 12.5 S fs DS D D25 C 3250 pF iss C V = 0V, V = 25V, f = 1MHz 265 pF oss GS DS C 24 pF rss R Gate Input Resistance 0.20 Gi t 28 ns d(on) Resistive Switching Times t 10 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 30 ns d(off) R = 2 (External) t 8 ns G f Q 64 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 23 nC gs GS DS DSS D D25 Q 27 nC gd R 0.18 C/W thJC R TO-247 0.21 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 15 A S GS I Repetitive, Pulse Width Limited by T 60 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 250 ns rr I = 7.5A, -di/dt = 100A/ s F I 7.6 A RM V = 100V, V = 0V R GS Q 660 nC RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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