Preliminary Technical Information TM TM TrenchT2 HiperFET V = 150V IXFH160N15T2 DSS I = 160A Power MOSFET D25 R 9.0m DS(on) t 160ns N-Channel Enhancement Mode rr Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings V T = 25C to 175C 150 V DSS J V T = 25C to 175C, R = 1M 150 V DGR J GS V Continuous 20 V G GSS D Tab V Transient 30 V GSM S I T = 25C 160 A D25 C I T = 25C, Pulse Width Limited by T 440 A G = Gate D = Drain DM C JM S = Source Tab = Drain I T = 25C80A A C E T = 25C 1.5 J AS C dv/dt I I , V V ,T 175C 15 V/ns S DM DD DSS J Features P T = 25C 880 W D C z International Standard Package T -55 ... +175 C z J High Current Handling Capability T 175 C JM z Fast Intrinsic Diode T -55 ... +175 C stg z Dynamaic dv/dt Rated z T Maximum Lead Temperature for Soldering 300 C L Avalanche Rated T Plastic Body for 10s 260 C z SOLD Low R DS(on) M Mounting Torque 1.13/10 Nm/lb.in. d Weight 6 g Advantages z Easy to Mount z Space Savings z High Power Density Applications Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. z J DC-DC Converters z Battery Chargers BV V = 0V, I = 250A 150 V DSS GS D z Switch-Mode and Resonant-Mode V V = V , I = 1mA 2.5 4.5 V Power Supplies GS(th) DS GS D z DC Choppers I V = 20V, V = 0V 200 nA GSS GS DS z AC Motor Drives I V = V , V = 0V 10 A z DSS DS DSS GS Uninterruptible Power Supplies T = 150C 1 mA z J High Speed Power Switching Applications R V = 10V, I = 0.5 I , Note 1 7.7 9.0 m DS(on) GS D D25 2010 IXYS CORPORATION, All Rights Reserved DS100228A(04/10)IXFH160N15T2 Symbol Test Conditions Characteristic Values TO-247 (IXFH) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 80 130 S fs DS D C 15 nF iss P C V = 0V, V = 25V, f = 1MHz 1120 pF 1 2 3 oss GS DS C 113 pF rss t 37 ns d(on) Resistive Switching Times t 15 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 50 ns d(off) e R = 2 (External) G t 26 ns f Terminals: 1 - Gate 2 - Drain 3 - Source Q 253 nC g(on) Dim. Millimeter Inches Q V = 10V, V = 0.5 V , I = 0.5 I 67 nC gs GS DS DSS D D25 Min. Max. Min. Max. Q 73 nC A 4.7 5.3 .185 .209 gd A 2.2 2.54 .087 .102 1 R 0.17 C/W A 2.2 2.6 .059 .098 thJC 2 b 1.0 1.4 .040 .055 R 0.21 C/W thCS b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 Source-Drain Diode e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 Symbol Test Conditions Characteristic Values L1 4.50 .177 (T = 25C Unless Otherwise Specified) Min. Typ. Max. P 3.55 3.65 .140 .144 J Q 5.89 6.40 0.232 0.252 I V = 0V 160 A R 4.32 5.49 .170 .216 S GS S 6.15 BSC 242 BSC I Repetitive, Pulse Width Limited by T 640 A SM JM V I = 100A, V = 0V, Note 1 1.4 V SD F GS t 160 ns rr I = 80A, -di/dt = 100A/s F I 7.00 A RM V = 75V, V = 0V R GS Q 0.32 C RM Note 1. Pulse test, t 300s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537