Q3-Class V = 1000V IXFT18N100Q3 DSS TM HiperFET I = 18A IXFH18N100Q3 D25 Power MOSFET R 660m DS(on) D N-Channel Enhancement Mode Avalanche Rated TO-268 G Fast Intrinsic Rectifier (IXFT) S G S D (Tab) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 1000 V DSS J TO-247 V T = 25 C to 150 C, R = 1M 1000 V DGR J GS (IXFH) V Continuous 30 V GSS V Transient 40 V GSM I T = 25 C 18 A D25 C G I T = 25 C, Pulse Width Limited by T 60 A D DM C JM D (Tab) S I T = 25 C 18 A A C E T = 25 C 1.5 J AS C G = Gate D = Drain S = Source Tab = Drain dv/dt I I , V V , T 150C 50 V/ns S DM DD DSS J P T = 25 C 830 W D C T -55 ... +150 C J T 150 C Features JM T -55 ... +150 C stg Low Intrinsic Gate Resistance T Maximum Lead Temperature for Soldering 300 C L International Standard Packages T 1.6 mm (0.062in.) from Case for 10s 260 C Low Package Inductance SOLD Fast Intrinsic Rectifier M Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in. d Low R and Q DS(on) G Weight TO-268 4.0 g TO-247 6.0 g Advantages High Power Density Easy to Mount Space Savings Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 1mA 1000 V DSS GS D Applications V V = V , I = 4mA 3.5 6.5 V GS(th) DS GS D DC-DC Converters I V = 30V, V = 0V 100 nA Battery Chargers GSS GS DS Switch-Mode and Resonant-Mode I V = V , V = 0V 25 A DSS DS DSS GS Power Supplies T = 125 C 1.25 mA J DC Choppers Temperature and Lighting Controls R V = 10V, I = 0.5 I , Note 1 660 m DS(on) GS D D25 DS100390A(1/20) 2020 IXYS CORPORATION, All Rights Reserved IXFT18N100Q3 IXFH18N100Q3 Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 9 16 S fs DS D D25 C 4890 pF iss C V = 0V, V = 25V, f = 1MHz 400 pF oss GS DS C 34 pF rss R Gate Input Resistance 0.20 Gi t 37 ns d(on) Resistive Switching Times t 32 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 40 ns d(off) R = 3 (External) t 13 ns G f Q 90 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 33 nC gs GS DS DSS D D25 Q 37 nC gd R 0.15 C/W thJC R TO-247 0.21 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 18 A S GS I Repetitive, Pulse Width Limited by T 72 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 300 ns rr I = 9A, -di/dt = 100A/ s F I 11.0 A RM V = 100V, V = 0V R GS Q 1.5 C RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537