TM IXFH 20N80P V = 800 V PolarHV HiPerFET DSS IXFT 20N80P I =20 A D25 Power MOSFET IXFV 20N80P R 520 m DS(on) N-Channel Enhancement Mode IXFV 20N80PS t 250 ns Avalanche Rated rr Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-247 (IXFH) V T = 25 C to 150C 800 V DSS J V T = 25 C to 150 C R = 1 M 800 V DGR J GS (TAB) V Continuous 30 V GSS V Transient 40 V GSM TO-268 (IXFT) I T = 25C20A D25 C I T = 25C, pulse width limited by T 50 A DM C JM I T = 25C10A AR C G S E T = 25C30mJ D (TAB) AR C E T = 25 C 1.0 J AS C PLUS220 (IXFV) dv/dt I I , di/dt 100 A/s, V V , 10 V/ns S DM DD DSS T 150C, R = 4 J G P T = 25C 500 W D C T -55 ... +150 C G J D (TAB) D T 150 C S JM T -55 ... +150 C stg PLUS220 SMD(IXFV..S) T Maximum lead temperature for soldering 300 C L T Plastic case for 10 s 260 C SOLD M Mounting torque (TO-247) 1.13/10 Nm/lb.in. d G F Mounting force (PLUS220) 1..65 / 2.5..15 N/lb C S D (TAB) Weight TO-247 6 g TO-268 5.5 g PLUS220 types 4 g G = Gate D = Drain S = Source Tab = Drain Features l Symbol Test Conditions Characteristic Values International standard packages (T = 25 C, unless otherwise specified) Min. Typ. Max. l J Fast recovery diode l Unclamped Inductive Switching (UIS) BV V = 0 V, I = 250 A 800 V DSS GS D rated l V V = V , I = 4 mA 3.0 5.0 V Low package inductance GS(th) DS GS D - easy to drive and to protect I V = 30 V , V = 0 200 nA GSS GS DC DS Advantages I V = V 25 A DSS DS DSS l V = 0 V T = 125C 1000 A Easy to mount GS J l Space savings R V = 10 V, I = 10 A 520 m l DS(on) GS D High power density Pulse test, t 300 s, duty cycle d 2 % DS99511E(03/06) 2006 IXYS All rights reservedIXFH 20N80P IXFT 20N80P IXFV 20N80P IXFV 20N80PS Symbol Test Conditions Characteristic Values (T = 25C unless otherwise specified) J Min. Typ. Max. g V = 20 V I = 10 A, pulse test 14 23 S fs DS D C 4685 pF iss C V = 0 V, V = 25 V, f = 1 MHz 356 pF oss GS DS C 26 pF rss t 30 ns d(on) t V = 10 V, V = 0.5 V , I = 10 A 24 ns r GS DS DSS D t R = 2 (External) 85 ns d(off) G t 24 ns f Q 86 nC g(on) Q V = 10 V, V = 0.5 V , I = 10 A 27 nC gs GS DS DSS D Q 24 nC gd R 0.25 C/W thJC R (TO-247, PLUS220) 0.21 C/W thCS Source-Drain Diode Characteristic Values (T = 25C unless otherwise specified) J Symbol Test Conditions Min. Typ. Max. I V = 0 V 20 A S GS I Repetitive 50 A SM V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t I = 25A, -di/dt = 100 A/s 250 ns rr F Q V = 100V V = 0 V 0.8 C RM R GS I 6.0 A RM IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2