TM X-Class HiPerFET V = 850V IXFP20N85X DSS Power MOSFET I = 20A IXFH20N85X D25 R 330m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-220 (IXFP) G Symbol Test Conditions Maximum Ratings D S V T = 25 C to 150 C 850 V D (Tab) DSS J V T = 25 C to 150 C, R = 1M 850 V DGR J GS TO-247 (IXFH) V Continuous 30 V GSS V Transient 40 V GSM I T = 25 C20A D25 C G I T = 25 C, Pulse Width Limited by T 50 A D DM C JM D (Tab) S I T = 25 C10A A C G = Gate D = Drain E T = 25 C 800 mJ AS C S = Source Tab = Drain dv/dt I I , V V , T 150C 50 V/ns S DM DD DSS J P T = 25 C 540 W D C T -55 ... +150 C J T 150 C JM Features T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C International Standard Packages L High Voltage Package T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Low R and Q DS(ON) G M Mounting Torque 1.13 / 10 Nm/lb.in d Avalanche Rated Weight TO-220 3 g Low Package Inductance TO-247 6 g Advantages High Power Density Easy to Mount Symbol Test Conditions Characteristic Values Space Savings (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 1mA 850 V DSS GS D Applications V V = V , I = 2.5mA 3.5 5.5 V GS(th) DS GS D Switch-Mode and Resonant-Mode I V = 30V, V = 0V 100 nA Power Supplies GSS GS DS DC-DC Converters I V = V , V = 0V 25 A PFC Circuits DSS DS DSS GS T = 125C 1.5 mA AC and DC Motor Drives J Robotics and Servo Controls R V = 10V, I = 0.5 I , Note 1 330 m DS(on) GS D D25 2018 IXYS CORPORATION, All Rights Reserved DS100703D(4/18) IXFP20N85X IXFH20N85X Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 0.5 I , Note 1 6 10 S fs DS D D25 R Gate Input Resistance 0.8 Gi C 1660 pF iss C V = 0V, V = 25V, f = 1MHz 1730 pF oss GS DS C 24 pF rss Effective Output Capacitance C 67 pF o(er) Energy related V = 0V GS C 270 pF V = 0.8 V o(tr) Time related DS DSS t 20 ns d(on) Resistive Switching Times t 28 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 44 ns d(off) R = 5 (External) G t 20 ns f Q 63 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 12 nC gs GS DS DSS D D25 Q 26 nC gd R 0.23 C/W thJC R TO-220 0.50 C/W thCS TO-247 0.21 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 20 A S GS I Repetitive, pulse Width Limited by T 80 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 190 ns rr I = 20A, -di/dt = 100A/ s F Q 1.6 C RM V = 100V R I 16.5 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537