X-On Electronics has gained recognition as a prominent supplier of IXFH22N65X2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXFH22N65X2 MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IXFH22N65X2 IXYS

IXFH22N65X2 electronic component of IXYS
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Part No.IXFH22N65X2
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET MOSFET 650V/22A Ultra Junction X2
Datasheet: IXFH22N65X2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 7.728 ea
Line Total: USD 7.73 
Availability - 251
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
17
Ship by Mon. 18 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 9.8689
10 : USD 8.7184
30 : USD 8.0181
90 : USD 7.4323

251
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 7.728
4 : USD 5.502
9 : USD 5.194
510 : USD 4.998

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Category
Brand Category
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We are delighted to provide the IXFH22N65X2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXFH22N65X2 and other electronic components in the MOSFETs category and beyond.

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TM X2-Class HiPerFET V = 650V IXFA22N65X2 DSS Power MOSFET I = 22A IXFP22N65X2 D25 R 145m DS(on) IXFH22N65X2 N-Channel Enhancement Mode Avalanche Rated TO-263 (IXFA) G S Symbol Test Conditions Maximum Ratings D (Tab) TO-220 (IXFP) V T = 25 C to 150 C 650 V DSS J V T = 25 C to 150 C, R = 1M 650 V DGR J GS V Continuous 30 V GSS V Transient 40 V GSM G D I T = 25 C22A S D25 C D (Tab) I T = 25 C, Pulse Width Limited by T 44 A DM C JM TO-247 (IXFH) I T = 25 C5A A C E T = 25 C1J AS C dv/dt I I , V V , T 150C 50 V/ns S DM DD DSS J G P T = 25 C 390 W D C D D (Tab) S T -55 ... +150 C J T 150 C G = Gate D = Drain JM S = Source Tab = Drain T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Features F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb C M Mounting Torque (TO-220 & TO-247) 1.13 / 10 Nm/lb.in d International Standard Packages Low R and Q Weight TO-263 2.5 g DS(ON) G Avalanche Rated TO-220 3.0 g Low Package Inductance TO-247 6.0 g Advantages Symbol Test Conditions Characteristic Values High Power Density (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Easy to Mount BV V = 0V, I = 250A 650 V DSS GS D Space Savings V V = V , I = 1.5mA 3.5 5.0 V GS(th) DS GS D Applications I V = 30V, V = 0V 100 nA GSS GS DS I V = V , V = 0V 10 A Switch-Mode and Resonant-Mode DSS DS DSS GS Power Supplies T = 125C 1.5 mA J DC-DC Converters R V = 10V, I = 0.5 I , Note 1 145 m PFC Circuits DS(on) GS D D25 AC and DC Motor Drives Robotics and Servo Controls 2018 IXYS CORPORATION, All Rights Reserved DS100682C(6/18)IXFA22N65X2 IXFP22N65X2 IXFH22N65X2 Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 0.5 I , Note 1 8 14 S fs DS D D25 R Gate Input Resistance 1.0 Gi C 2190 pF iss C V = 0V, V = 25V, f = 1MHz 1450 pF oss GS DS C 1.3 pF rss Effective Output Capacitance C 92 pF o(er) Energy related V = 0V GS C 330 pF V = 0.8 V o(tr) Time related DS DSS t 30 ns d(on) Resistive Switching Times t 37 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 42 ns d(off) R = 10 (External) G t 18 ns f Q 37 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 12 nC gs GS DS DSS D D25 Q 14 nC gd R 0.32 C/W thJC R TO-220 0.50 C/W thCS TO-247 0.21 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 22 A S GS I Repetitive, pulse Width Limited by T 88 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 145 ns rr I = 11A, -di/dt = 100A/ s F Q 890 nC RM V = 100V R I 12 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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