Preliminary Technical Information TM V = 900V Polar Power MOSFET IXFH24N90P DSS I = 24A TM IXFT24N90P HiPerFET D25 R 420m DS(on) N-Channel Enhancement Mode t 300ns rr Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 900 V DSS J V T = 25C to 150C, R = 1M 900 V DGR J GS TAB V Continuous 30 V GSS V Transient 40 V GSM I T = 25C24A TO-268 (IXFT) D25 C I T = 25C, pulse width limited by T 48 A DM C JM I T = 25C12A A C G E T = 25C1J AS C S TAB dV/dt I I , V V ,T 150C 15 V/ns S DM DD DSS J P T = 25C 660 W D C G = Gate D = Drain S = Source TAB = Drain T -55 ... +150 C J T 150 C JM T -55 ... +150 C Features stg z T Maximum lead temperature for soldering 300 C International standard packages L z Avalanche Rated T Plastic body for 10s 260 C SOLD z Low package inductance z Fast intrinsic diode M Mounting torque (TO-247) 1.13/10 Nm/lb.in. d Weight TO-247 6 g Advantages TO-268 4 g z Easy to mount z Space savings z High power density Applications: Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) Min. Typ. Max. J z Switched-mode and resonant-mode BV V = 0V, I = 1mA 900 V power supplies DSS GS D z DC-DC Converters V V = V , I = 1mA 3.5 6.5 V z GS(th) DS GS D Laser Drivers z AC and DC motor drives I V = 30V, V = 0V 200 nA GSS GS DS z Robotics and servo controls I V = V 25 A DSS DS DSS V = 0V T = 125C 2 mA GS J R V = 10V, I = 0.5 I , Note 1 420 m DS(on) GS D D25 2008 IXYS CORPORATION, All rights reserved DS100059(10/08) IXFH24N90P IXFT24N90P Symbol Test Conditions Characteristic Values TO-247 (IXFH) Outline (T = 25C unless otherwise specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 10 16 S fs DS D D25 R Gate input resistance 1.1 Gi P C 7200 pF iss C V = 0V, V = 25V, f = 1MHz 490 pF oss GS DS C 60 pF rss t 46 ns d(on) t Resistive Switching Times 40 ns r e t V = 10V, V = 0.5 V , I = 0.5 I 68 ns Dim. Millimeter Inches d(off) GS DS DSS D D25 Min. Max. Min. Max. t R = 2 (External) 38 ns f G A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 Q 130 nC 2 g(on) b 1.0 1.4 .040 .055 Q V = 10V, V = 0.5 V , I = 0.5 I 50 nC b 1.65 2.13 .065 .084 gs GS DS DSS D D25 1 b 2.87 3.12 .113 .123 2 Q 58 nC gd C .4 .8 .016 .031 D 20.80 21.46 .819 .845 R 0.19 C/W thJC E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 R (TO-247) 0.25 C/W thCS L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 Source-Drain Diode Characteristic Values S 6.15 BSC 242 BSC T = 25C unless otherwise specified) Min. Typ. Max. J I V = 0V 24 A S GS TO-268 Outline I Repetitive, pulse width limited by T 96 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 300 ns rr I = 12A, -di/dt = 100A/s F Q 1.1 C RM V = 100V, V = 0V R GS I 11 A RM Note 1: Pulse test, t 300s duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537