TM TM Polar3 HiperFET V = 500V IXFA26N50P3 DSS I = 26A Power MOSFET IXFP26N50P3 D25 R 250m DS(on) IXFQ26N50P3 N-Channel Enhancement Mode Avalanche Rated IXFH26N50P3 Fast Intrinsic Rectifier TO-263 (IXFA) TO-3P (IXFQ) TO-220 (IXFP) G S G G D D (Tab) D S S D (Tab) D (Tab) Symbol Test Conditions Maximum Ratings TO-247 (IXFH) V T = 25 C to 150 C 500 V DSS J V T = 25 C to 150 C, R = 1M 500 V DGR J GS V Continuous 30 V GSS V Transient 40 V GSM G D I T = 25 C 26 A S D (Tab) D25 C I T = 25 C, Pulse Width Limited by T 78 A DM C JM G = Gate D = Drain I T = 25 C13 A A C S = Source Tab = Drain E T = 25 C 300 mJ AS C dv/dt I I , V V , T 150C 35 V/ns S DM DD DSS J P T = 25 C 500 W D C T -55 ... +150 C J T 150 C JM Features T -55 ... +150 C stg Fast Intrinsic Rectifier T Maximum Lead Temperature for Soldering 300 C L Avalanche Rated T Plastic Body for 10s 260 C SOLD Low R and Q DS(ON) G F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb C Low Package Inductance M Mounting Torque (TO-220, TO-3P & TO-247) 1.13 / 10 Nm/lb.in d Weight TO-263 2.5 g TO-220 3.0 g Advantages TO-3P 5.5 g TO-247 6.0 g High Power Density Easy to Mount Space Savings Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 1mA 500 V DSS GS D Applications V V = V , I = 4mA 3.0 5.0 V GS(th) DS GS D Switch-Mode and Resonant-Mode I V = 30V, V = 0V 100 nA Power Supplies GSS GS DS DC-DC Converters I V = V , V = 0V 25 A DSS DS DSS GS Laser Drivers T = 125C 750 A J AC and DC Motor Drives R V = 10V, I = 0.5 I , Note 1 250 m Robotics and Servo Controls DS(on) GS D D25 2018 IXYS CORPORATION, All Rights Reserved DS100457D(6/18)IXFA26N50P3 IXFP26N50P3 IXFQ26N50P3 IXFH26N50P3 Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 20V, I = 0.5 I , Note 1 14 23 S fs DS D D25 R Gate Input Resistance 2.1 Gi C 2220 pF iss C V = 0V, V = 25V, f = 1MHz 280 pF oss GS DS C 8 pF rss Effective Output Capacitance C 108 pF o(er) Energy related V = 0V GS C 185 pF V = 0.8 V o(tr) Time related DS DSS t 21 ns d(on) Resistive Switching Times t 7 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 38 ns d(off) R = 3 (External) G t 5 ns f Q 42 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 11 nC gs GS DS DSS D D25 Q 15 nC gd R 0.25 C/W thJC R TO-220 0.50 C/W thCS TO-3P & TO-247 0.25 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 26 A S GS I Repetitive, pulse Width Limited by T 104 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 250 ns rr I = 13A, -di/dt = 100A/ s F Q 0.9 nC RM V = 100V R I 10.2 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537