TM TM Polar3 HiperFET V = 500V IXFQ34N50P3 DSS I = 34A Power MOSFET IXFH34N50P3 D25 R 180m DS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-3P (IXFQ) G D Symbol Test Conditions Maximum Ratings S Tab V T = 25 C to 150 C 500 V DSS J V T = 25 C to 150 C, R = 1M 500 V DGR J GS TO-247 ( IXFH) V Continuous 30 V GSS V Transient 40 V GSM I T = 25 C 34 A D25 C I T = 25 C, Pulse Width Limited by T 85 A DM C JM G I T = 25 C17 A D Tab A C S E T = 25 C 400 mJ AS C dv/dt I I , V V , T 150C 35 V/ns G = Gate D = Drain S DM DD DSS J S = Source Tab = Drain P T = 25 C 695 W D C T -55 ... +150 C J T 150 C JM Features T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C L Fast Intrinsic Rectifier T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Avalanche Rated Low R and Q M Mounting Torque 1.13 / 10 Nm/lb.in. DS(ON) G d Low Package Inductance Weight TO-3P 5.5 g TO-247 6.0 g Advantages High Power Density Easy to Mount Space Savings Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 1mA 500 V DSS GS D Switch-Mode and Resonant-Mode V V = V , I = 4mA 3.0 5.0 V GS(th) DS GS D Power Supplies I V = 30V, V = 0V 100 nA GSS GS DS DC-DC Converters Laser Drivers I V = V , V = 0V 50 A DSS DS DSS GS AC and DC Motor Drives T = 125C 1.5 mA J Robotics and Servo Controls R V = 10V, I = 0.5 I , Note 1 180 m DS(on) GS D D25 2014 IXYS CORPORATION, All Rights Reserved DS100411C(03/14)IXFQ34N50P3 IXFH34N50P3 Symbol Test Conditions Characteristic Values TO-3P Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 20 33 S fs DS D D25 C 3260 pF iss C V = 0V, V = 25V, f = 1MHz 390 pF oss GS DS C 7.8 pF rss R Gate Input Resistance 1.5 Gi t 23 ns d(on) Resistive Switching Times t 57 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 40 ns 1 - GATE d(off) R = 2 (External) 2,4 - DRAIN G t 9 ns 3 - SOURCE f Q 60 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 17 nC gs GS DS DSS D D25 Q 21 nC gd R 0.18 C/W thJC R 0.25 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J TO-247 Outline I V = 0V 34 A S GS I Repetitive, Pulse Width Limited by T 136 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS P t 250 ns 1 2 3 rr I = 17A, -di/dt = 100A/ s F I 10.8 A RM V = 100V, V = 0V R GS Q 1.0 C RM e Terminals: 1 - Gate 2 - Drain Note 1. Pulse test, t 300 s, duty cycle, d 2%. 3 - Source Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537