X3-Class V = 650V IXFH34N65X3 DSS TM HiPerFET I = 34A D25 Power MOSFET R 100m DS(on) D N-Channel Enhancement Mode G Avalanche Rated S TO-247 (IXFH) Symbol Test Conditions Maximum Ratings G V T = 25 C to 150 C 650 V D DSS J D (Tab) S V T = 25 C to 150 C, R = 1M 650 V DGR J GS G = Gate D = Drain V Continuous 20 V GSS S = Source Tab = Drain V Transient 30 V GSM I T = 25 C 34 A D25 C I T = 25 C, Pulse Width Limited by T 48 A DM C JM I T = 25 C 5 A A C Features E T = 25 C 750 mJ AS C dv/dt I I , V V , T 150C 50 V/ns S DM DD DSS J International Standard Package Low R and Q DS(ON) G P T = 25 C 446 W D C Avalanche Rated T -55 ... +150 C Low Package Inductance J T 150 C JM T -55 ... +150 C stg Advantages T Maximum Lead Temperature for Soldering 300 C L High Power Density 1.6 mm (0.062 in.) from Case for 10s Easy to Mount M Mounting Torque 1.13 / 10 Nm/lb.in d Space Savings Weight 6 g Applications Switch-Mode and Resonant-Mode Power Supplies Symbol Test Conditions Characteristic Values DC-DC Converters (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J PFC Circuits BV V = 0V, I = 1mA 650 V AC and DC Motor Drives DSS GS D Robotics and Servo Controls V V = V , I = 2.5mA 3.2 5.2 V GS(th) DS GS D I V = 20V, V = 0V 100 nA GSS GS DS I V = V , V = 0V 25 A DSS DS DSS GS T = 125 C 3 mA J R V = 10V, I = 0.5 I , Note 1 100 m DS(on) GS D D25 DS101014B(09/21) 2021 Littelfuse, Inc. IXFH34N65X3 Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 0.5 I , Note 1 13 22 S fs DS D D25 R Gate Input Resistance 1.7 Gi C 2025 pF iss C V = 0V, V = 25V, f = 1MHz 2800 pF oss GS DS C 2.6 pF rss Effective Output Capacitance C 100 pF o(er) Energy related V = 0V GS C 440 pF V = 0.8 V o(tr) Time related DS DSS t 24 ns d(on) Resistive Switching Times t 10 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 47 ns d(off) R = 10 (External) G t 6 ns f Q 29 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 11 nC gs GS DS DSS D D25 Q 10 nC gd R 0.28 C/W thJC R 0.21 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 34 A S GS I Repetitive, Pulse Width Limited by T 136 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 150 ns rr I = 17A, -di/dt = 100A/s F Q 1.05 C RM V = 100V R I 14.0 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. Littelfuse reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537