X-On Electronics has gained recognition as a prominent supplier of IXFH46N65X3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXFH46N65X3 MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IXFH46N65X3 IXYS

IXFH46N65X3 electronic component of IXYS
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See Product Specifications
Part No.IXFH46N65X3
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET DISCRETE MOSFET 46A 650V X3 TO
Datasheet: IXFH46N65X3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 10.6835 ea
Line Total: USD 10.68 
Availability - 4
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 10.6835
10 : USD 9.154
30 : USD 8.303
120 : USD 7.6245
270 : USD 6.1525

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Hts Code
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IXFH46N65X3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXFH46N65X3 and other electronic components in the MOSFETs category and beyond.

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X3-Class V = 650V IXFH46N65X3 DSS TM HiPerFET I = 46A D25 Power MOSFET R 73m DS(on) D G N-Channel Enhancement Mode Avalanche Rated TO-247 S (IXFH) G D D (Tab) Symbol Test Conditions Maximum Ratings S V T = 25 C to 150 C 650 V DSS J G = Gate D = Drain V T = 25 C to 150 C, R = 1M 650 V S = Source Tab = Drain DGR J GS V Continuous 20 V GSS V Transient 30 V GSM I T = 25 C 46 A D25 C I T = 25 C, Pulse Width Limited by T 65 A DM C JM I T = 25 C 10 A A C Features E T = 25 C 1.2 J AS C dv/dt I I , V V , T 150C 50 V/ns S DM DD DSS J International Standard Package Low R and Q P T = 25 C 520 W DS(ON) G D C Avalanche Rated T -55 ... +150 C Low Package Inductance J T 150 C JM T -55 ... +150 C stg Advantages T Maximum Lead Temperature for Soldering 300 C L High Power Density 1.6 mm (0.062 in.) from Case for 10s Easy to Mount M Mounting Torque 1.13 / 10 Nm/lb.in d Space Savings Weight 6 g Applications Switch-Mode and Resonant-Mode Power Supplies Symbol Test Conditions Characteristic Values DC-DC Converters (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J PFC Circuits BV V = 0V, I = 1mA 650 V AC and DC Motor Drives DSS GS D Robotics and Servo Controls V V = V , I = 2.5mA 3.2 5.2 V GS(th) DS GS D I V = 20V, V = 0V 100 nA GSS GS DS I V = V , V = 0V 25 A DSS DS DSS GS T = 125 C 2 mA J R V = 10V, I = 0.5 I , Note 1 73 m DS(on) GS D D25 2021 Littelfuse, Inc. DS101022B(9/21) IXFH46N65X3 Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max J g V = 20V, I = 0.5 I , Note 1 17 28 S fs DS D D25 R Gate Input Resistance 3.8 Gi C 2730 pF iss C V = 0V, V = 25V, f = 1MHz 4170 pF oss GS DS C 18 pF rss Effective Output Capacitance C 130 pF o(er) Energy related V = 0V GS C 580 pF V = 0.8 V o(tr) Time related DS DSS t 28 ns d(on) Resistive Switching Times t 16 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 48 ns d(off) R = 3 (External) G t 8 ns f Q 40 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 13 nC gs GS DS DSS D D25 Q 12 nC gd R 0.24 C/W thJC R 0.21 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 46 A S GS I Repetitive, Pulse Width Limited by T 184 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 165 ns rr I = 23A, -di/dt = 100A/s F Q 1.3 C RM V = 100V R I 16.0 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. Littelfuse reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR
Littelfuse/IXYS
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